ZXM63N03X Zetex Semiconductors, ZXM63N03X Datasheet

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DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.135 ; I (BR)DSS DS(ON) DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. ...

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ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at T =25°C (a)(d) ...

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ISSUE 1 - OCTOBER 2005 CHARACTERISTICS 3 ZXMD63N03X ...

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ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On ...

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ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXMD63N03X ...

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ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 6 ZXMD63N03X ...

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... H 4.78 5.03 0.188 L 0.41 0.66 0.016 ° 0° 6° 0° © Zetex Semiconductors plc 2005 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraße 19 700 Veterans Memorial Hwy D-81673 München Hauppauge, NY 11788 Germany USA Telefon: (49 Telephone: (1) 631 360 2222 Fax: (49 Fax: (1) 631 360 8222 europe ...