ZXMC3A18DN8 Zetex Semiconductors, ZXMC3A18DN8 Datasheet

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ZXMC3A18DN8

Manufacturer Part Number
ZXMC3A18DN8
Description
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC3A18DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
ZXMC3A18DN8TC
Manufacturer:
ZETEX
Quantity:
20 000
ADVANCE INFORMATION
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel = V
P-Channel = V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
DRAFT ISSUE C - JUNE 2003
DEVICE
ZXMC3A18DN8TA
ZXMC3A18DN8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor Drive
LCD backlighting
ZXMC
3A18
(BR)DSS
(BR)DSS
REEL
SIZE
13”
= -30V : R
7”
= 30V : R
WIDTH
12mm
12mm
TAPE
DS
DS
(
(
on
on
QUANTITY
2500 units
PER REEL
500 units
)= 0.035 ; I
)= 0.025 ; I
1
D
D
= -6.3A
= 7.6A
Q1 = N-channel
ZXMC3A18DN8
S E M I C O N D U C T O R S
Q2 = P-channel
Top View

Related parts for ZXMC3A18DN8

ZXMC3A18DN8 Summary of contents

Page 1

... SIZE WIDTH ZXMC3A18DN8TA 7” 12mm ZXMC3A18DN8TC 13” 12mm DEVICE MARKING • ZXMC 3A18 DRAFT ISSUE C - JUNE 2003 ( )= 0.025 ; 0.035 ; I = -6. N-channel QUANTITY PER REEL 500 units 2500 units 1 ZXMC3A18DN8 Q2 = P-channel Top View ...

Page 2

... ZXMC3A18DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V = 10V; T =25° 10V; T =70° 10V; T =25° (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a) (d) Power Dissipation at T =25°C ...

Page 3

... ADVANCE INFORMATION DRAFT ISSUE C - JUNE 2003 ZXMC3A18DN8 CHARACTERISTICS ...

Page 4

... ZXMC3A18DN8 N-Channel ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On-Delay Time Rise Time ...

Page 5

... ADVANCE INFORMATION DRAFT ISSUE C - JUNE 2003 TYPICAL CHARACTERISTICS 5 ZXMC3A18DN8 ...

Page 6

... ZXMC3A18DN8 ADVANCE INFORMATION TYPICAL CHARACTERISTICS 6 DRAFT ISSUE C - JUNE 2003 ...

Page 7

... Reverse Recovery Charge NOTES (1) Measured under pulsed conditions. Pulse width (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. DRAFT ISSUE C - JUNE 2003 ZXMC3A18DN8 = 25°C unless otherwise stated) amb SYMBOL MIN. TYP. MAX. UNIT CONDITIONS ...

Page 8

... ZXMC3A18DN8 PACKAGE OUTLINE Pin 1 Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimetres Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 H 5.80 6.20 0.228 0.244 E 3.80 4.00 0.150 0.157 L 0.40 1.27 0.016 0.050 © Zetex plc 2003 Europe Zetex plc ...

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