ZXMN2A01E6 Zetex Semiconductors, ZXMN2A01E6 Datasheet - Page 3

• Manufacturer Part Number: ZXMN2A01E6
• Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

PROVISIONAL ISSUE B - JUNE 2001
ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width 300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
(at T
3
20
0.7
A
= 25°C unless otherwise stated).
2% .
TYP.
0.09
6.2
299
60
33
2.31
2.60
1.55
1.31
3.1
0.7
1.0
0.84
11.2
3.64
MAX.
1
100
0.12
0.30
0.95
ZXMN2A01E6
UNIT CONDITIONS.
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
GS
=250 A, V
=250 A, V
=4A
GS
=25°C, I
=25°C, I
=6.0 , V
=20V, V
=10V,I
=15 V, V
=10V,V
=4.5V, I
=2.5V, I
=0V
=10V, I
= 12V, V
D
S
F
GS
=4A
=4A,
D
=0.6A,
GS
D
D
GS
GS
GS
DS
=4A
=4A
=1.5A
=4.5V,
DS
=5V
=0V
=0V,
=0V
= V
=0V
GS