ZXMP3A13F Zetex Semiconductors, ZXMP3A13F Datasheet - Page 4

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ZXMP3A13F

Manufacturer Part Number
ZXMP3A13F
Description
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet

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ELECTRICAL CHARACTERISTICS
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP3A13F
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1) R
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
(at T
SYMBOL
V
I
I
V
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
A
= 25°C unless otherwise stated)
4
MIN.
-1.0
-30
-0.85
TYP.
2.48
39.8
25.8
11.3
2.58
5.15
0.65
0.92
18.6
14.8
204
1.5
2.8
7.5
MAX. UNIT CONDITIONS
0.210
0.330
-0.95
-0.5
100
PROVISIONAL ISSUE C - JULY 2004
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
=-1.4A
=-1.4A
=-250 A, V
=-250 A, V
=25°C, I
=25°C, I
=6.0 , V
=-30V, V
=-15V,I
=-15V, V
=-15V,V
=-15V,V
= 20V, V
=-10V, I
=-4.5V, I
=0V
=-15V, I
S
F
D
=-0.95A,
=-1.1A,
GS
D
GS
GS
=-1.4A
D
GS
D
GS
=-1.4A
GS
DS
DS
=-1A
=-1.1A
=-10V
=-5V,
=-10V,
=0V
=0V,
=0V
= V
=0V
GS

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