MCP1700-1202E/MB Microchip Technology, MCP1700-1202E/MB Datasheet - Page 3

• Manufacturer Part Number: MCP1700-1202E/MB
• Description: Low Quiescent Current LDO
• Manufacturer: Microchip Technology

1.0
Absolute Maximum Ratings †
V
All inputs and outputs w.r.t. .............(V
Peak Output Current .................................... Internally Limited
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ................................... 150°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM;MM)
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise specified, all limits are established for V
(X5R), C
Boldface type applies for junction temperatures, T
Input / Output Characteristics
Input Operating Voltage
Input Quiescent Current
Maximum Output Current
Output Short Circuit Current
Output Voltage Regulation
V
Line Regulation
Load Regulation
Dropout Voltage
V
Dropout Voltage
V
Output Rise Time
Note 1:
DD ............................................................................................ +
OUT
R
R
2003 Microchip Technology Inc.
Temperature Coefficient
2.5V
2.5V
2:
3:
4:
5:
6:
7:
IN
Parameters
ELECTRICAL
CHARACTERISTICS
= 1 µF (X5R), T
The minimum V
V
input voltage (V
TCV
temperature range. V
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a V
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
R
is the nominal regulator output voltage. For example: V
OUT
= (V
OUT-HIGH
R
A
IN
IN
+ 1V differential applied.
= +25°C.
= V
must meet two conditions: V
(V
OUT-LOW
V
R
V
V
TCV
OUT
I
I
- V
OUT_mA
OUT_SC
OUT
IN
IN
+ 1.0V); I
V
Sym
V
V
-V
-V
T
OUT
SS
I
OUT
OUT-LOW
X V
IN
q
R
OUT
/V
OUT
OUT
-0.3V) to (V
OUT
/
IN
= lowest voltage measured over the temperature range.
)
OUT
) *10
4 kV;
V
V
R
R
= 100 µA.
Min
-1.0
-1.5
250
200
2.3
J
-3.0%
-2.0%
—
—
—
—
—
—
6
IN
(Note 6) of -40°C to +125°C.
/ (V
+0.3V)
400V
6.5V
R
* Temperature), V
IN
V
±0.75
±1.0
R
Typ
408
178
150
500
1.6
—
—
—
50
%
±0.4
2.3V and V
V
V
R
R
† Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
R
+1.0
+1.5
Max
350
350
+3.0%
+2.0%
6.0
—
—
—
—
—
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
4
IN
OUT-HIGH
A
, T
V
R
J
ppm/°C
,
Units
+ 3.0%
%/V
mA
mA
mV
mV
µA
µs
JA
%
V
V
IN
). Exceeding the maximum allowable power
= highest voltage measured over the
= V
R
V
Note 1
I
For V
For V
V
Current (peak current) measured
10 ms after short is applied.
Note 2
Note 3
(V
I
I
Note 4
I
I
10% V
R
L
L
L
L
L
+ 1, I
DROPOUT
IN
L
= 0 mA, V
R
= 0.1 mA to 250 mA for V
= 0.1 mA to 200 mA for V
= 250 mA, (Note 1, Note 5)
= 200 mA, (Note 1, Note 5)
= 50 resistive
+1)V
= V
R
R
LOAD
R
R
OUT
to 90% V
2.5V
2.5V
+1V, V
.
MCP1700
.
= 100 µA, C
V
IN
Conditions
IN
= V
OUT
6V
R
R
DS21826A-page 3
+1V
= GND,
V
IN
OUT
= 0V to 6V,
R
R
= 1 µF
2.5V
2.5V