MCP1702 Microchip Technology, MCP1702 Datasheet - Page 13
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MCP1702
Manufacturer Part Number
MCP1702
Description
250 mA Low Quiescent Current LDO Regulator
Manufacturer
Microchip Technology
Datasheet
1.MCP1702.pdf
(26 pages)
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6.0
6.1
The MCP1702 is most commonly used as a voltage
regulator. It’s low quiescent current and low dropout
voltage makes it ideal for many battery-powered
applications.
FIGURE 6-1:
6.1.1
6.2
6.2.1
The internal power dissipation of the MCP1702 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(2.0 µA x V
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The
temperature specified for the MCP1702 is +125
estimate the internal junction temperature of the
MCP1702, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (Rθ
ambient for the SOT-23A pin package is estimated at
336
© 2007 Microchip Technology Inc.
I
150 mA
Where:
OUT
Input Voltage Range = 2.8V to 3.2V
°
P
V
1.8V
C/W.
V
LDO
OUT
V
OUT(MIN)
maximum
IN(MAX)
APPLICATION CIRCUITS AND
ISSUES
Typical Application
Power Calculations
Package Type = SOT-23A
V
P
=
V
IN
LDO
IN
APPLICATION INPUT CONDITIONS
POWER DISSIPATION
JA
OUT
(
). The following equation can be used to
maximum = 3.2V
V
). The thermal resistance from junction to
IN MAX )
C
1 µF Ceramic
typical = 1.8V
OUT
(
= LDO Pass device internal
= Maximum input voltage
= LDO minimum output voltage
GND
V
I
OUT
continuous
OUT
power dissipation
MCP1702
Typical Application Circuit.
)
–
= 150 mA maximum
V
OUT MIN
(
V
IN
operating
)
) I
V
(2.8V to 3.2V)
×
IN
1 µF Ceramic
OUT MAX )
C
IN
(
junction
°
C
)
.
To
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
EQUATION 6-5:
Where:
Where:
Where:
Where:
P
T
T
T
T
T
P
P
D(MAX)
T
A(MAX)
J(RISE)
J(RISE)
J(MAX)
J(MAX)
TOTAL
TOTAL
AMAX
Rθ
Rθ
Rθ
T
T
T
JA
JA
JA
J MAX
P
A
J
(
D MAX
T
(
= Maximum continuous junction
= Total device power dissipation
= Maximum ambient temperature
= Maximum device power
= Maximum continuous junction
= Thermal resistance from
J RISE
= Rise in device junction
= Maximum device power
= Junction Temperature
= Rise in device junction
(
)
T
=
temperature
Thermal resistance from
junction to ambient
dissipation
temperature
Maximum ambient temperature
junction to ambient
temperature over the ambient
temperature
dissipation
Thermal resistance from
junction to ambient
temperature over the ambient
temperature
Ambient temperature
)
J
=
P
)
=
TOTAL
=
(
---------------------------------------------------
T
T
J RISE
P
J MAX
(
(
D MAX
(
×
MCP1702
Rθ
Rθ
)
)
+
–
)
JA
JA
×
T
T
A
A MAX
Rθ
+
(
DS22008B-page 13
T
JA
AMAX
)
)