TDA8512 Philips Semiconductors, TDA8512 Datasheet - Page 9

• Manufacturer Part Number: TDA8512
• Description: 26 W BTL and 2 x 13 W SE or 4 x 13 W SE power amplifier
• Manufacturer: Philips Semiconductors

Philips Semiconductors
12 DC CHARACTERISTICS
V
Notes
1. The circuit is DC adjusted at V
2. Only for BTL channel (V
13 AC CHARACTERISTICS
V
specified.
2001 Nov 16
Supply
V
I
V
Mode select switch
V
Mute condition
V
V
Standby condition
V
I
I
BTL channel
P
THD
B
f
f
G
SVRR
SYMBOL
q(tot)
stb
sw(on)
ro(l)
ro(h)
P
P
SYMBOL
P
O
sw(on)
O
stb
o
P
26 W BTL and 2
4
V
= 15 V; T
= 15 V; f
V
V
OO
OO
13 W SE power amplifier
i
amb
= 1 kHz; T
output power
total harmonic distortion
power bandwidth
low frequency roll-off
high frequency roll-off
closed loop voltage gain
supply voltage ripple rejection
supply voltage
total quiescent current
DC output voltage
DC output offset voltage
switch-on voltage
mute voltage
output voltage
DC output offset voltage
standby voltage
standby current
switch-on current
= 25 C; measured according to Figs 6 and 7; unless otherwise specified.
PARAMETER
amb
PARAMETER
= 25 C; bandpass 22 Hz to 22 kHz; measured according to Figs 6 and 7; unless otherwise
OUT4
13 W SE or
P
V
= 6 to 18 V and AC operating at V
OUT3
).
R
P
THD = 0.5%; P
respect to 17 W
at 1 dB; note 2
at 1 dB
note 3;
o
L2
THD = 0.5%
THD = 10%
operating
mute
standby
= 1 W
= 4
note 1
note 2
V
note 2
i(max)
CONDITIONS
(see Fig.7); note 1
CONDITIONS
= 1 V; f
9
o
= 1 dB with
i
= 1 kHz
P
= 8.5 to 18 V.
6
8.5
3.3
0
16
22
20
25
48
46
80
MIN.
MIN.
20
26
0.06
20 to 15000
25
26
15
80
6.9
12
TYP.
TYP.
Preliminary specification
18
160
150
6.4
2
150
2
100
40
TDA8512J
MAX.
27
MAX.
V
mA
V
mV
V
V
mV
mV
V
A
A
W
W
%
Hz
Hz
kHz
dB
dB
dB
dB
UNIT
UNIT