G4BC20UD International Rectifier, G4BC20UD Datasheet - Page 2

• Manufacturer Part Number: G4BC20UD
• Description: Search -----> IRG4BC20UD
• Manufacturer: International Rectifier

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IRG4BC20UD
Electrical Characteristics @ T
Switching Characteristics @ T
V
∆V
V
V
∆V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
E
2
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ies
oes
res
g
gc
rr
(rec)M
(BR)CES
GE(th)
/dt
/∆T
/∆T
J
J
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
----
----
----
----
3.0
1.4
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
0.69
1.85
2.27
1.87
0.16
0.13
0.29
0.49
110
100
220
530
124
240
210
----
----
-11
4.3
----
----
1.4
1.3
----
4.5
7.5
7.4
3.5
4.5
10
39
15
93
38
17
39
37
65
27
55
±100
1700
250
140
170
138
360
----
----
2.1
----
----
6.0
----
1.7
1.6
6.8
----
----
----
----
0.3
----
----
----
----
----
----
----
----
----
5.0
8.0
----
----
---- mV/°C V
41
16
55
90
V/°C
A/µs
µA
nA
nC
mJ
mJ
nH
nC
pF
V
V
S
V
ns
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 6.5A
= 13A
= 6.5A, T
= 8.0A
= 8.0A, T
= 6.5A
= 6.5A, V
= 6.5A, V
= 25°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 150°C,
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
C
C
J
J
CC
CC
CE
CE
C
C
See Fig.
See Fig.
Conditions
Conditions
See Fig.
See Fig.
= 250µA
= 1.0mA
= 150°C
= 150°C
G
G
C
= 250µA
= 250µA
= 600V
= 600V, T
= 480V
See Fig. 9, 10, 11, 18
= 480V
= 50Ω
= 50Ω
= 6.5A
15
14
17
16
See Fig. 8
See Fig. 7
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V
See Fig. 2, 5
See Fig. 13
I
di/dt 200A/µs
F
J
GE
= 150°C
= 8.0A
V
R
= 15V
= 200V