LM4881N National Semiconductor, LM4881N Datasheet - Page 2

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LM4881N

Manufacturer Part Number
LM4881N
Description
Dual 200 mW Headphone Amplifier with Shutdown Mode
Manufacturer
National Semiconductor
Datasheet

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Symbol
V
I
I
V
P
THD+N
PSRR
DD
SD
Electrical Characteristics
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Storage Temperature
Input Voltage
Power Dissipation (Note 4)
ESD Susceptibility (Note 5)
ESD Susceptibility (Note 6)
Junction Temperature
Soldering Information (Note 1)
The following specifications apply for V
DD
OS
O
Small Outline Package
Vapor Phase (60 seconds)
Infrared (15 seconds)
Power Supply Voltage
Quiescent Current
Shutdown Current
Offset Voltage
Output Power
Total Harmonic Distortion +
Noise
Parameter
DD
−0.3V to V
= 5V unless otherwise specified. Limits apply for T
(Notes 2, 3)
V
V
V
THD = 0.1% (max); f = 1 kHz;
R
R
R
THD + N = 10%; f = 1 kHz;
R
R
R
R
R
f = 1 kHz
C
mVrms, f = 120Hz
−65˚C to +150˚C
Internally limited
IN
PIN1
IN
L
L
L
L
L
L
L
L
B
= 8
= 16
= 32
= 8
= 16
= 32
= 16 , P
= 32 , P
= 1.0 µF, V
= 0V, I
= 0V
(Note 3)
= V
DD
Conditions
DD
+ 0.3V
O
3500V
150˚C
215˚C
220˚C
250V
O
6.0V
= 0A
O
= 75 mWrms;
RIPPLE
= 120 mWrms;
2
= 200
Thermal Resistance
Operating Ratings
Temperature Range
Supply Voltage
Note 1: See AN-450 “Surface Mounting and their Effects on Product Reli-
ability” for other methods of soldering surface mount devices.
JC
JA
JC
JA
JC
JA
T
MIN
(MSOP)
(SOP)
(DIP)
(MSOP)
(SOP)
(DIP)
T
Typ (Note 7)
A
0.025
0.02
T
200
150
300
200
110
3.6
0.7
85
50
MAX
5
LM4881
A
Limit (Note 8)
= 25C.
125
2.7
5.5
6.0
50
5
−40˚C
2.7V
Units (Limits)
mA (max)
mV (max)
mW (min)
V
µA (max)
V (max)
T
V (min)
DD
210˚C/W
170˚C/W
107˚C/W
mW
mW
mW
mW
mW
A
dB
%
%
56˚C/W
35˚C/W
37˚C/W
85˚C
5.5V

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