MC74HCT541A ON Semiconductor, MC74HCT541A Datasheet - Page 2

MC74HCT541A

Manufacturer Part Number

MC74HCT541A

Description

Octal 3-State Non-Inverting Buffer/Line Driver/Line Receiver With LSTTL-Compatible Inputs

Manufacturer

ON Semiconductor

Datasheet

1.MC74HCT541A.pdf (8 pages)

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Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î

*Maximum Ratings are those values beyond which damage to the device may occur.

†Derating — Plastic DIP: – 10 mW/ _ C from 65 _ to 125 _ C

For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).

1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).

2. Total Supply Current = I CC +

MAXIMUM RATINGS*

RECOMMENDED OPERATING CONDITIONS

DC CHARACTERISTICS

Symbol

Functional operation should be restricted to the Recommended Operating Conditions.

V in , V out

Symbol

V CC

V out

T stg

I out

I CC

V CC

V in

P D

T L

I in

t r , t f

V OH

V OL

T A

I CC

V IH

I OZ

V IL

I in

I CC

Î Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

DC Supply Voltage (Referenced to GND)

DC Input Voltage (Referenced to GND)

DC Output Voltage (Referenced to GND)

DC Input Current, per Pin

DC Output Current, per Pin

DC Supply Current, V CC and GND Pins

Power Dissipation in Still Air

Storage Temperature Range

Lead Temperature, 1 mm from Case for 10 Seconds

DC Supply Voltage (Referenced to GND)

DC Input Voltage, Output Voltage (Referenced to GND)

Operating Temperature Range, All Package Types

Input Rise/Fall Time (Figure 1)

Minimum High–Level Input

Voltage

Maximum Low–Level Input

Voltage

Minimum High–Level Output

Voltage

Maximum Low–Level Output

Voltage

Maximum Input Leakage Current

Maximum Three–State Leakage

Current

Maximum Quiescent Supply

Current (per Package)

Additional Quiescent Supply

Current

SOIC Package: – 7 mW/ _ C from 65 _ to 125 _ C

Parameter

(Voltages Referenced to GND)

Parameter

I CC .

Plastic DIP or SOIC Package

Parameter

SOIC Package†

V out = 0.1V or V CC – 0.1V

|I out |

V out = 0.1V or V CC – 0.1V

|I out |

V in = V IH or V IL

|I out |

V in = V IH or V IL

|I out |

V in = V IH or V IL

V in = V CC or GND

Output in High Impedance State

V in = V IL or V IH

V out = V CC or GND

V in = V CC or GND

I out = 0 A

V in = 2.4V, Any One Input

V i

V in = V CC or GND, Other Inputs

I out = 0 A

Plastic DIP†

V CC or GND Other Inputs

20 A

http://onsemi.com

MC74HCT541A

Condition

Î Î Î Î Î

– 0.5 to V CC + 0.5

– 0.5 to + 7.0

– 65 to + 150

Î Î Î

|I out |

– 55

Min

4.5

Value

750

500

260

Î Î

6.0mA

+ 125

V CC

Max

500

5.5

Î Î Î

Unit

V CC

_ C

4.5

5.5

4.5

5.5

4.5

5.5

4.5

5.5

4.5

5.5

–55 to 25 C

–55 C

2.9

3.98

0.26

circuitry to guard against damage

due to high static voltages or electric

fields. However, precautions must

be taken to avoid applications of any

voltage higher than maximum rated

voltages to this high–impedance cir-

cuit. For proper operation, V in and

V out should be constrained to the

range GND

tied to an appropriate logic voltage

level (e.g., either GND or V CC ).

Unused outputs must be left open.

2.0

0.8

4.4

5.4

0.1

0.5

This device contains protection

Unused inputs must always be

Guaranteed Limit

3.84

0.33

85 C

25 to 125 C

2.0

0.8

4.4

5.4

0.1

1.0

5.0

(V in or V out )

2.4

125 C

3.70

0.40

160

2.0

0.8

4.4

5.4

0.1

10.0

1.0

V CC .

Unit

MC74HCT541A ON Semiconductor, MC74HCT541A Datasheet - Page 2

MC74HCT541A

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