LMX1501 National Semiconductor, LMX1501 Datasheet - Page 9
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LMX1501
Manufacturer Part Number
LMX1501
Description
PLLatinumTM 1.1 GHz Frequency Synthesizer for RF Personal Communications
Manufacturer
National Semiconductor
Datasheet
1.LMX1501.pdf
(22 pages)
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Charge Pump Current Specification Definitions
I1
I2
I3
1 I
2 I
3 I
4 K
RF Sensitivity Test Block Diagram
Note 1 N
Note 2 Sensitivity limit is reached when the error of the divided RF output f
V
e
e
e
D o
D o-sink
D o
e
l
l
CP sink current at V
CP sink current at V
CP sink current at V
I2
I2
e
vs V
vs T
Voltage offset from positive and negative rails Dependent on VCO tuning range relative to V
l
Phase detector charge pump gain constant
b
l
vs I
A
D o
I1
e
temp
l
l
I5
e
D o-source
10 000 R
e
b
l
l
l
Charge Pump Output Current magnitude variation vs Temperature
I3
b
Charge Pump Output Current magnitude variation vs Voltage
l
l
I2
e
l
I2
e
D o
D o
D o
25 C
l
Charge Pump Output Current Sink vs Source Mismatch
a
50 P
e
e
e
l
I1
l
l l
l
I5
V
V
a
P
P
V
l
I2
e
b
2
l
I3
64
l
100%
25 C
V
100% and
l
100% and
e
l
I2
l
I5
l
l
I4
a
l
l
b
I5
temp
l
l
I6
l
l
b
OUT
l
I5
9
e
is greater than or equal to 1 Hz
l
I4
25 C
e
e
l
I4
I5
I6
a
e
e
e
l l
l
I6
CP source current at V
CP source current at V
CP source current at V
I5
l
25 C
100%
CC
l
and ground Typical values are between 0 5V and 1 0V
100%
D o
D o
D o
e
e
e
V
V
P
P
V
b
2
V
TL W 12340– 17
TL W 12340– 18