JANSH2N7261 International Rectifier, JANSH2N7261 Datasheet
JANSH2N7261
Related parts for JANSH2N7261
JANSH2N7261 Summary of contents
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... Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed 300 (0.063 in. (1.6mm) from case for 10s 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 N CHANNEL MEGA RAD HARD DSS DS(on) D 100V 0.18 8.0A 100V ...
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IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate ...
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... International Rectifier comprises three radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MIL-STD-750, test method 1019 condition A. International Rectifier has imposed a standard gate condition of 12 volts per note 5 and a V bias condition equal to 80% of the DS device rated voltage per note 6 ...
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IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Fig 4. Typical ...
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Post-Irradiation Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 7. Typical Transient Response of Rad Hard HEXFET During 12 1x10 Rad (Si)/Sec Exposure www.irf.com IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices Fig 6. Typical On-State Resistance Vs. Fig 8a. ...
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IRHF7130, IRHF8130, JANSR-,JANSH-,2N7261 Devices Note: Bias Conditions during radiation: V Fig 10. Typical Output Characteristics Pre-Irradiation Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si Vdc Vdc GS DS Fig 11. Typical Output Characteristics ...
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Radiation Characterstics Note: Bias Conditions during radiation: V Fig 14. Typical Output Characteristics Pre-Irradiation Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) www.irf.com JANSR-,JANSH-,2N7261 Devices = 0 Vdc Vdc GS DS Fig 15. Typical Output Characteristics ...
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IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices Fig 18. Typical Output Characteristics Fig 20. Typical Transfer Characteristics 8 Pre-Irradiation Fig 19. Typical Output Characteristics Fig 21. Normalized On-Resistance Vs. Temperature www.irf.com ...
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Pre-Irradiation Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage Fig 24. Typical Source-Drain Diode Forward Voltage www.irf.com IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices Fig 23. Typical Gate Charge Vs. Fig 25. Maximum Safe Operating 30 Gate-to-Source Voltage Area 9 ...
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IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices Fig 26. Maximum Drain Current Vs. Case Temperature Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 Pre-Irradiation D.U. 12V Pulse Width µs Duty Factor Fig 27a. Switching Time Test Circuit ...
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Pre-Irradiation 12V 20V Fig 29a. Unclamped Inductive Test Circuit Fig 29b. Unclamped Inductive Waveforms ...
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IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices See Figures 18 through 30 for pre-radiation curves Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report 25V, Starting 25°C, Peak 8.0A,L>3.0mH ...