JANTX2N6847 International Rectifier, JANTX2N6847 Datasheet - Page 2

• Manufacturer Part Number: JANTX2N6847
• Description: POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=1.5ohm/ Id=-2.5A)
• Manufacturer: International Rectifier

JANTX2N6847, JANTXV2N6847 Device
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Thermal Resistance
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
L D
L S
C iss
C oss
C rss
BV DSS / T J Temperature Coefficient of Breakdown
I S
I SM
V SD
t rr
Q RR
t on
R thJC
R thJA
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Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Ambient
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
To Order
Min. Typ. Max. Units
Index
Min. Typ. Max. Units
—
—
—
—
—
—
—
Min. Typ. Max. Units
-200
-2.0
1.0
4.0
1.1
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.22
15.0
100
330
5.0
33
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.25
-4.8
-2.5
300
-10
175
3.0
1.725
-250
-100
-4.0
100
-25
1.5
3.2
8.4
—
—
15
50
—
—
—
50
70
40
—
—
—
K/W
ns
A
V
C
V/°C
S ( )
nA
nC
ns
nH
pF
V
V
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
A
T j = 25°C, I F = -2.5A, di/dt
T
Next Data Sheet
j
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
V DS = 0.8 x Max Rating,V GS = 0V
= 25°C, I S = -2.5A, V GS = 0V
Reference to 25°C, I D = -1.0 mA
V DS > -15V, I DS = -1.6A
Typical socket mount
V DS = V GS , I D = -250 A
V DS = Max. Rating x 0.5
V GS = 0V, I D = -1.0 mA
V DS = 0.8 x Max Rating
V GS = -10V, I D = -2.5A
V GS = -10V, I D = -2.5A
V DD = -100V, I D = -2.5A,
Test Conditions
V GS = -10V, I D = -1.6A
Test Conditions
R G = 7.5 , VGS = -10V
V GS = 0V, V DS = -25V
V GS = 0V, T J = 125°C
see figures 6 and 13
Test Conditions
V DD
see figure 10
V GS = -20V
see figure 5
f = 1.0 MHz
V GS = 20V
-50V
Modified MOSFET
symbol showing the
internal inductances.
-100A/ s