JANTXV2N6845 International Rectifier, JANTXV2N6845 Datasheet - Page 2
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JANTXV2N6845
Manufacturer Part Number
JANTXV2N6845
Description
POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)
Manufacturer
International Rectifier
Datasheet
1.JANTXV2N6845.pdf
(6 pages)
JANTX2N6845, JANTXV2N6845 Device
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Thermal Resistance
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
L D
L S
C iss
C oss
C rss
BV DSS / T J Temperature Coefficient of Breakdown
I S
I SM
V SD
t rr
Q RR
t on
R thJC
R thJA
Previous Datasheet
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Ambient
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
To Order
Min. Typ. Max. Units
Index
Min. Typ. Max. Units
—
—
—
—
—
—
—
Min. Typ. Max. Units
-100
1.25
-2.0
4.3
1.3
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.10
170
380
5.0
45
—
—
—
—
—
—
—
—
—
—
—
—
—
15
—
—
—
6.25
-4.8
-4.0
200
175
-16
3.1
-250
-100
0.60
0.69
16.3
-4.0
100
100
-25
4.7
9.0
—
—
70
—
—
—
60
50
—
—
—
K/W
ns
A
V
C
V/°C
S ( )
nA
nC
nH
ns
pF
V
V
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
A
T j = 25°C, I F = -4.0A, di/dt
T
j
Next Data Sheet
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
V DS = 0.8 x Max Rating,V GS = 0V
= 25°C, I S = -4.0A, V GS = 0V
Reference to 25°C, I D = -1.0 mA
V DS > -15V, I DS = -2.6A
Typical socket mount
V DS = V GS , I D = -250 A
V DS = Max. Rating x 0.5
V GS = 0V, I D = -1.0 mA
V DS = 0.8 x Max Rating
Test Conditions
V GS = -10V, I D = -2.6A
V GS = -10V, I D = -4.0A
V GS = -10V, I D = -4.0A
Test Conditions
R G = 7.5 , VGS = -10V
V GS = 0V, V DS = -25V
V GS = 0V, T J = 125°C
V DD = -50V, I D = -4.0A,
see figures 6 and 13
Test Conditions
V DD
see figure 10
V GS = -20V
see figure 5
f = 1.0 MHz
V GS = 20V
-50V
Modified MOSFET
symbol showing the
internal inductances.
-100A/ s