MRF1511T1 Motorola, MRF1511T1 Datasheet - Page 2

• Manufacturer Part Number: MRF1511T1
• Description: RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
• Manufacturer: Motorola

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture)
MRF1511T1
2
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Gate Threshold Voltage
Drain–Source On–Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Common–Source Amplifier Power Gain
Drain Efficiency
(V DS = 35 Vdc, V GS = 0)
(V GS = 10 Vdc, V DS = 0)
(V DS = 7.5 Vdc, I D = 170 A)
(V GS = 10 Vdc, I D = 1 Adc)
(V DS = 7.5 Vdc, V GS = 0, f = 1 MHz)
(V DS = 7.5 Vdc, V GS = 0, f = 1 MHz)
(V DS = 7.5 Vdc, V GS = 0, f = 1 MHz)
(V DD = 7.5 Vdc, P out = 8 Watts, I DQ = 150 mA, f = 175 MHz)
(V DD = 7.5 Vdc, P out = 8 Watts, I DQ = 150 mA, f = 175 MHz)
Characteristic
(T C = 25 C unless otherwise noted)
V DS(on)
Symbol
V GS(th)
I GSS
I DSS
C oss
C rss
C iss
G ps
Min
1.0
—
—
—
—
—
—
10
50
MOTOROLA RF DEVICE DATA
11.5
Typ
100
1.6
0.4
53
55
—
—
8
Max
2.1
—
—
—
—
—
—
1
1
Unit
Vdc
Vdc
Adc
Adc
pF
pF
pF
dB
%