IRH8450 International Rectifier, IRH8450 Datasheet
IRH8450
Related parts for IRH8450
IRH8450 Summary of contents
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... Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight PD - 91807A IRH7450 IRH8450 N CHANNEL MEGA RAD HARD DSS DS(on) D 500V 11A 500V 11A 6 Rads (Si) Pre-Irradiation IRH7450, IRH8450 Units 11 A 7.0 44 150 W 1.2 W/°C ±20 V 500 3.5 V/ns -55 to 150 ...
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... IRH7450, IRH8450 Devices IRH7450, IRH8450 Devices Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward ...
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... Cu 28 www.irf.com 1, column 2, IRH8450. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct com- parison ...
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... IRH7450, IRH8450 Devices Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure Post-Irradiation www.irf.com ...
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... IRH7450, IRH8450 Devices Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 7. Typical Transient Response of Rad Hard HEXFET During 12 1x10 Rad (Si)/Sec Exposure www.irf.com Fig 6. Typical On-State Resistance Vs. Fig 8a. Gate Stress of V GSS Equals 12 Volts During Radiation Fig 8b. V Stress Equals ...
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... IRH7450, IRH8450 Devices Note: Bias Conditions during radiation: V Fig 10. Typical Output Characteristics Pre-Irradiation Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si Vdc Vdc GS DS Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) Radiation Characterstics ...
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... IRH7450, IRH8450 Devices Note: Bias Conditions during radiation: V Fig 14. Typical Output Characteristics Pre-Irradiation Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) www.irf.com = 0 Vdc 400 Vdc GS DS Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) Radiation Characterstics ...
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... IRH7450, IRH8450 Devices Fig 18. Typical Output Characteristics Fig 20. Typical Transfer Characteristics 8 Pre-Irradiation Fig 19. Typical Output Characteristics Fig 21. Normalized On-Resistance Vs. Temperature www.irf.com ...
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... IRH7450, IRH8450 Devices Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage Fig 24. Typical Source-Drain Diode Forward Voltage www.irf.com Pre-Irradiation Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 25. Maximum Safe Operating Area 30 9 ...
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... IRH7450, IRH8450 Devices Fig 26. Maximum Drain Current Vs. Case Temperature Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 Pre-Irradiation D.U. 12V Pulse Width µs Duty Factor Fig 27a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) Fig 27b. Switching Time Waveforms ...
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... IRH7450, IRH8450 Devices 12V 20V Fig 29a. Unclamped Inductive Test Circuit Fig 29b. Unclamped Inductive Waveforms Charge Fig30a. Basic Gate Charge Waveform www.irf.com ...
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... IRH7450, IRH8450 Devices See Figures 18 through 30 for pre-irradiation curves Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report 25V, Starting 25°C, Peak 11A, L>7.4mH 11A, di/dt 120A DSS , T J 150°C Suggested RG =2 ...