IRH8250 International Rectifier, IRH8250 Datasheet
IRH8250
Related parts for IRH8250
IRH8250 Summary of contents
Page 1
... Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight PD - 90697B IRH7250 IRH8250 N CHANNEL MEGA HARD RAD DSS DS(on) D 200V 0.11 26A 200V 0.11 26A 6 Rads (Si) Pre-Irradiation IRH7250, IRH8250 Units 104 150 W 1.2 W/°C ±20 V 500 5.0 V/ns -55 to 150 o C 11.5 (typical) ...
Page 2
... IRH7250, IRH8250 Devices Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...
Page 3
... Cu 28 www.irf.com 1, column 2, IRH8250. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct com- parison ...
Page 4
... IRH7250, IRH8250 Devices Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure Post-Irradiation www.irf.com ...
Page 5
... IRH7250, IRH8250 Devices Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 7. Typical Transient Response of Rad Hard HEXFET During 12 1x10 Rad (Si)/Sec Exposure www.irf.com Fig 6. Typical On-State Resistance Vs. Fig 8a. Gate Stress of V GSS Equals 12 Volts During Radiation Fig 8b. V Stress Equals ...
Page 6
... IRH7250, IRH8250 Devices Note: Bias Conditions during radiation: V Fig 10. Typical Output Characteristics Pre-Irradiation Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si Vdc Vdc GS DS Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) Radiation Characterstics ...
Page 7
... IRH7250, IRH8250 Devices Note: Bias Conditions during radiation: V Fig 14. Typical Output Characteristics Pre-Irradiation Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) www.irf.com = 0 Vdc 160 Vdc GS DS Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) Radiation Characterstics ...
Page 8
... IRH7250, IRH8250 Devices Fig 18. Typical Output Characteristics Fig 20. Typical Transfer Characteristics 8 Pre-Irradiation Fig 19. Typical Output Characteristics Fig 21. Normalized On-Resistance Vs. Temperature www.irf.com ...
Page 9
... IRH7250, IRH8250 Devices Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage Fig 24. Typical Source-Drain Diode Forward Voltage www.irf.com Pre-Irradiation Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 25. Maximum Safe Operating Area 30 9 ...
Page 10
... IRH7250, IRH8250 Devices Fig 26. Maximum Drain Current Vs. Case Temperature Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 Pre-Irradiation D.U. 12V Pulse Width µs Duty Factor Fig 27a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) Fig 27b. Switching Time Waveforms ...
Page 11
... IRH7250, IRH8250 Devices 12V 20V Fig 29a. Unclamped Inductive Test Circuit Fig 29b. Unclamped Inductive Waveforms Charge Fig30a. Basic Gate Charge Waveform www.irf.com ...
Page 12
... IRH7250, IRH8250 Devices See Figures 18 through 31 for pre-irradiation curves Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report 25V, Starting 25°C, Peak 26A,L=1.9mH = 26A, di/dt 190A DSS , T J 150°C Suggested RG =2 ...