IRHM7250 International Rectifier, IRHM7250 Datasheet - Page 3

• Manufacturer Part Number: IRHM7250
• Description: RADIATION HARDENED POWER MOSFET THRU-HOLE
• Manufacturer: International Rectifier

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Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
1. Part number IRHM7250 (JANSR2N7269)
2. Part numbers IRHM3250 (JANSF2N7269), IRHM4250 (JANSG2N7269) and IRHM8250 (JANSH2N7269)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
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Radiation Characteristics
BV
V
I
I
I
R
R
V
GSS
GSS
DSS
Ion
Cu
Br
SD
GS(th)
DS(on)
DS(on)
DSS
MeV/(mg/cm
LET
28
36.8
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254AA)
Diode Forward Voltage
Drain-to-Source Breakdown Voltage
Parameter
2
))
Energy
(MeV)
285
305
Fig a. Single Event Effect, Safe Operating Area
200
150
100
50
0
Range
(µm)
43
39
0
@
V
190
-5
100
GS
Min
200
2.0
100K Rads(Si)
—
—
—
—
—
—
=0V @
VGS
-10
-100
V
Max
0.094
0.10
100
4.0
180
100
1.4
25
GS
1
—
=-5V @
600 to 1000K Rads (Si)
-15
1.25
Min
200
—
—
—
—
—
—
V
V
170
100
DS(V)
GS
0.149
0.155
=-10V @
-100
100
Max
4.5
50
1.4
-20
—
IRHM7250, JANSR2N7269
2
nA
µA
V
Units
V
125
V
50
GS
Cu
Br
=-15V @
V
V
GS
V
V
V
GS
V
Test Conditions
DS
GS
GS
V
GS
= V
V
GS
=160V, V
= 0V, I
V
GS
= 12V, I
= 12V, I
= 0V, I S = 26A
DS
GS
—
= -20 V
—
= 20V
, I
=-20V
D
D
= 1.0mA
D
D
= 1.0mA
GS
=16A
=16A
=0V
3