IRHM7230 International Rectifier, IRHM7230 Datasheet

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IRHM7230

Manufacturer Part Number
IRHM7230
Description
(IRHM7230 / IRHM8230) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
Manufacturer
International Rectifier
Datasheet
www.datasheet4u.com
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
200Volt, 0.40 , MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 10
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
Absolute Maximum Ratings
I D @ V GS = 12V, T C = 25°C
I D @ V GS = 12V, T C = 100°C Continuous Drain Current
www.irf.com
P D @ T C = 25°C
T STG
dv/dt
V GS
E AS
E AR
I DM
I AR
T J
®
TRANSISTOR
Parameter
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Continuous Drain Current
6
Rads(Si). Under
12
5
Rads
Rads
Product Summary
Features:
Part Number
Radiation Hardened up to 1 x 10
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
IRHM7230
IRHM8230
300 (0.063 in. (1.6mm) from case for 10s)
IRHM7230, IRHM8230
9.3 (typical)
-55 to 150
BV
200V
200V
0.60
±20
330
9.0
6.0
9.0
7.5
5.0
36
75
DSS
MEGA HARD RAD
IRHM7230
IRHM8230
Pre-Irradiation
R
N CHANNEL
DS(on)
6
Rads (Si)
PD - 90713C
Units
W/°C
V/ns
9.0A
9.0A
mJ
mJ
o
W
A
V
A
C
g
I
D
10/14/98
1

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IRHM7230 Summary of contents

Page 1

... Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets 300 (0.063 in. (1.6mm) from case for 10s 90713C IRHM7230 IRHM8230 N CHANNEL MEGA HARD RAD DSS DS(on) D 200V 9.0A 200V 9.0A 6 Rads (Si) Pre-Irradiation IRHM7230, IRHM8230 Units 9 0.60 W/°C ±20 V 330 mJ 9.0 A 7.5 mJ 5.0 V/ns -55 to 150 o C 9.3 (typical) ...

Page 2

... IRHM7230, IRHM8230 Devices www.datasheet4u.com Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS ...

Page 3

... DS device rated voltage per note 7. Pre- and post- irra- diation limits of the devices irradiated (Si) are identical and are presented in Table 1, col- umn 1, IRHM7230. Post-irradiation limits of the de- 6 vices irradiated Rads (Si) are presented in Table 1. Low Dose Rate ...

Page 4

... IRHM7230, IRHM8230 Devices www.datasheet4u.com Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure Post-Irradiation www.irf.com ...

Page 5

... Rad (Si)/Sec Exposure www.irf.com Fig 6. Typical On-State Resistance Vs. Fig 8a. Gate Stress of V GSS Equals 12 Volts During Radiation Fig 8b. V Stress Equals DSS 80 During Radiation VDSS IRHM7230, IRHM8230 Devices Neutron Fluence Level Fig 9. High Dose Rate (Gamma Dot) Test Circuit 5 ...

Page 6

... IRHM7230, IRHM8230 Devices www.datasheet4u.com Note: Bias Conditions during radiation: V Fig 10. Typical Output Characteristics Pre-Irradiation Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si Vdc Vdc GS DS Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) Radiation Characterstics ...

Page 7

... Radiation Characterstics www.datasheet4u.com Note: Bias Conditions during radiation: V Fig 14. Typical Output Characteristics Pre-Irradiation Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) www.irf.com IRHM7230, IRHM8230 Devices = 0 Vdc 160 Vdc GS DS Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) ...

Page 8

... IRHM7230, IRHM8230 Devices www.datasheet4u.com Fig 18. Typical Output Characteristics Fig 20. Typical Transfer Characteristics 8 Pre-Irradiation Fig 19. Typical Output Characteristics Fig 21. Normalized On-Resistance Vs. Temperature www.irf.com ...

Page 9

... Pre-Irradiation www.datasheet4u.com Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage Fig 24. Typical Source-Drain Diode Forward Voltage www.irf.com IRHM7230, IRHM8230 Devices Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 25. Maximum Safe Operating Area 30 9 ...

Page 10

... IRHM7230, IRHM8230 Devices www.datasheet4u.com Fig 26. Maximum Drain Current Vs. Case Temperature Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 Pre-Irradiation D.U. 12V Pulse Width µs Duty Factor Fig 27a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) Fig 27b. Switching Time Waveforms ...

Page 11

... Charge Fig30a. Basic Gate Charge Waveform www.irf.com IRHM7230, IRHM8230 Devices Fig 29c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 30b ...

Page 12

... IRHM7230, IRHM8230 Devices www.datasheet4u.com See Figures 18 through 30 for pre-radiation curves Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report 25V, Starting 25°C, Peak 9.0A 9.0A, di/dt 120A DSS , T J 150°C Suggested RG = 7.5 Pulse width 300 s ...

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