IRHM7230 International Rectifier, IRHM7230 Datasheet
IRHM7230
Related parts for IRHM7230
IRHM7230 Summary of contents
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... Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets 300 (0.063 in. (1.6mm) from case for 10s 90713C IRHM7230 IRHM8230 N CHANNEL MEGA HARD RAD DSS DS(on) D 200V 9.0A 200V 9.0A 6 Rads (Si) Pre-Irradiation IRHM7230, IRHM8230 Units 9 0.60 W/°C ±20 V 330 mJ 9.0 A 7.5 mJ 5.0 V/ns -55 to 150 o C 9.3 (typical) ...
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... IRHM7230, IRHM8230 Devices www.datasheet4u.com Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS ...
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... DS device rated voltage per note 7. Pre- and post- irra- diation limits of the devices irradiated (Si) are identical and are presented in Table 1, col- umn 1, IRHM7230. Post-irradiation limits of the de- 6 vices irradiated Rads (Si) are presented in Table 1. Low Dose Rate ...
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... IRHM7230, IRHM8230 Devices www.datasheet4u.com Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure Post-Irradiation www.irf.com ...
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... Rad (Si)/Sec Exposure www.irf.com Fig 6. Typical On-State Resistance Vs. Fig 8a. Gate Stress of V GSS Equals 12 Volts During Radiation Fig 8b. V Stress Equals DSS 80 During Radiation VDSS IRHM7230, IRHM8230 Devices Neutron Fluence Level Fig 9. High Dose Rate (Gamma Dot) Test Circuit 5 ...
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... IRHM7230, IRHM8230 Devices www.datasheet4u.com Note: Bias Conditions during radiation: V Fig 10. Typical Output Characteristics Pre-Irradiation Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si Vdc Vdc GS DS Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si) Radiation Characterstics ...
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... Radiation Characterstics www.datasheet4u.com Note: Bias Conditions during radiation: V Fig 14. Typical Output Characteristics Pre-Irradiation Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si) www.irf.com IRHM7230, IRHM8230 Devices = 0 Vdc 160 Vdc GS DS Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) ...
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... IRHM7230, IRHM8230 Devices www.datasheet4u.com Fig 18. Typical Output Characteristics Fig 20. Typical Transfer Characteristics 8 Pre-Irradiation Fig 19. Typical Output Characteristics Fig 21. Normalized On-Resistance Vs. Temperature www.irf.com ...
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... Pre-Irradiation www.datasheet4u.com Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage Fig 24. Typical Source-Drain Diode Forward Voltage www.irf.com IRHM7230, IRHM8230 Devices Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 25. Maximum Safe Operating Area 30 9 ...
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... IRHM7230, IRHM8230 Devices www.datasheet4u.com Fig 26. Maximum Drain Current Vs. Case Temperature Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 Pre-Irradiation D.U. 12V Pulse Width µs Duty Factor Fig 27a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) Fig 27b. Switching Time Waveforms ...
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... Charge Fig30a. Basic Gate Charge Waveform www.irf.com IRHM7230, IRHM8230 Devices Fig 29c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 30b ...
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... IRHM7230, IRHM8230 Devices www.datasheet4u.com See Figures 18 through 30 for pre-radiation curves Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report 25V, Starting 25°C, Peak 9.0A 9.0A, di/dt 120A DSS , T J 150°C Suggested RG = 7.5 Pulse width 300 s ...