IRHNJ8130 International Rectifier, IRHNJ8130 Datasheet
IRHNJ8130
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IRHNJ8130 Summary of contents
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... Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 600K Rads (Si) IRHNJ8130 1000K Rads (Si) International Rectifier’s RAD-Hard technology provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE) ...
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IRHNJ7130 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage ...
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... Diode Forward Voltage SD 1. Part numbers IRHNJ7130, IRHNJ3130, IRHNJ4130 2. Part number IRHNJ8130 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ...
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IRHNJ7130 100 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5. 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 Gate-to-Source Voltage (V) ...
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Pre-Irradiation 2000 1500 1000 500 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150 0.1 0.0 0 Fig 7. Typical Source-Drain Diode www.irf.com ...
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IRHNJ7130 Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 0.00001 Fig 11. ...
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Pre-Irradiation 12V 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Fig 13a. Basic Gate Charge Waveform www.irf.com 4 DataSheet U .com 1 ...
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IRHNJ7130 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature 25V, starting 25°C, L= 1.4mH, Peak 14.4A 12V I SD 14.4A, di/ 100V, T ...