IRHSLNA58064 International Rectifier, IRHSLNA58064 Datasheet
IRHSLNA58064
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IRHSLNA58064 Summary of contents
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... Product Summary Part Number IRHSLNA57064 100K Rads (Si) IRHSLNA53064 300K Rads (Si) IRHSLNA54064 600K Rads (Si) IRHSLNA58064 1000K Rads (Si) 7.1m Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area ...
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IRHSLNA57064 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage ...
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... Diode Forward Voltage SD 1. Part numbers IRHSLNA57064, IRHSLNA53064 and IRHSLNA54064 2. Part number IRHSLNA58064 International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ...
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IRHSLNA57064 1000 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = 150 C J 100 10 1 5.0 ...
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Pre-Irradiation Fig 5a. Basic Gate Charge Waveform www.irf.com www.DataSheet. 45A 48V 30V 12V FOR ...
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IRHSLNA57064 200 L IMITED BY PACKAGE 150 100 Case Temperature ( C) C Fig 6. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 ...
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Pre-Irradiation Fig 9a. Unclamped Inductive Test Circuit www.irf.com www.DataSheet.in 800 TOP BOTTOM 600 400 200 100 Starting T , Junction Temperature ( C) ...
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IRHSLNA57064 MOSFET Body Diode & Schottky Diode Characteristics 0.50 0.1 0.01 0.001 0.00001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky 8 www.DataSheet.in 100 10 1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V SD ...
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Pre-Irradiation Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature Pulse width 300 s; Duty Cycle 50% Duty Cycle, Rectangular 25V, starting 25°C, L= 0.13 mH Peak 75A ...