IRHSLNA58Z60 International Rectifier, IRHSLNA58Z60 Datasheet
IRHSLNA58Z60
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IRHSLNA58Z60 Summary of contents
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... Product Summary Part Number IRHSLNA57Z60 100K Rads (Si) IRHSLNA53Z60 300K Rads (Si) IRHSLNA54Z60 600K Rads (Si) IRHSLNA58Z60 1000K Rads (Si) Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area ...
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... Forward Turn-On Time Thermal Resistance Parameter R thJC Junction-to-Case (MOSFET) R thJC Junction-to-Case (Schottky) Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.DataSheet. 25°C (Unless Otherwise Specified) Min Typ Max Units 30 — ...
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... Diode Forward Voltage SD 1. Part numbers IRHSLNA57Z60, IRHSLNA53Z60 and IRHSLNA54Z60 2. Part number IRHSLNA58Z60 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ...
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IRHSLNA57Z60 10000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 1000 5.0V BOTTOM 4.5V 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = 150 C ° J 100 10 ...
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Pre-Irradiation Fig 5a. Basic Gate Charge Waveform www.irf.com www.DataSheet. 45A 24V 15V 100 150 200 ...
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IRHSLNA57Z60 200 150 100 Case Temperature ( C) C Fig 6. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 0.00001 Fig 8. Maximum Effective ...
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Pre-Irradiation Fig 9a. Unclamped Inductive Test Circuit www.irf.com www.DataSheet.in 1200 TOP 1000 BOTTOM 800 600 400 200 100 Starting T , Junction Temperature ...
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IRHSLNA57Z60 MOSFET Body Diode & Schottky Diode Characteristics 0.50 0.1 0.01 0.001 0.00001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky 8 www.DataSheet.in Fig Typical Forward Voltage Drop Characterstics 0.20 0.10 0.05 0.02 ...
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Pre-Irradiation Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature Pulse width ≤ 300 µs; Duty Cycle ≤ 2% 50% Duty Cycle, Rectangular 25V, starting 25°C, L= 0.3 mH Peak ...