AZ2822 Shanghai SIM-BCD Semiconductor, AZ2822 Datasheet

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AZ2822

Manufacturer Part Number
AZ2822
Description
Dual Low Voltage Power Amplifier
Manufacturer
Shanghai SIM-BCD Semiconductor
Datasheet
Pin Configuration
General Description
The AZ2822 is a monolithic integrated dual power
amplifier. it is intended for use in portable cassette
players and radios as dual audio power amplifier.
This IC is available in standard DIP-8 package.
Dec. 2004 Rev. 1. 1
DUAL LOW VOLTAGE POWER AMPLIFIER
Figure 2. Pin Configuration of AZ2822 (Top View)
OUT(1)
OUT(2)
GND
V
CC
Figure 1. Package Type of AZ2822
P Package
1
2
3
4
(DIP-8)
DIP-8
1
·
·
·
·
·
Features
8
7
6
5
Supply Voltage Down to 1.8V
Low Crossover Distortion
Low Quiescent Current
Bridge or Stereo Configuration
Few External Components
IN-(1)
IN+(1)
IN+(2)
IN-(2)
BCD Semiconductor Manufacturing Limited
Data Sheet
AZ2822

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AZ2822 Summary of contents

Page 1

... DUAL LOW VOLTAGE POWER AMPLIFIER General Description The AZ2822 is a monolithic integrated dual power amplifier intended for use in portable cassette players and radios as dual audio power amplifier. This IC is available in standard DIP-8 package. Pin Configuration OUT(1) OUT(2) Figure 2. Pin Configuration of AZ2822 (Top View) Dec ...

Page 2

... IN+(2) 7 IN+(1) 8 IN-(1) Functional Block Diagram OUT(1) OUT(2) Figure 3. Functional Block Diagram of AZ2822 Dec. 2004 Rev Function Output of amplifier 1 Power supply for all internal circuits Output of amplifier 2 Ground pin for all internal circuits Inverting input pin for amplifier 2 Non-inverting input pin for amplifier 2 ...

Page 3

... Lead Free Tin Lead AZ2822P-E1 AZ2822P Symbol = STG Symbol Min BCD Semiconductor Manufacturing Limited 3 Data Sheet AZ2822 Marking ID Packing Type LeadFree AZ2822P-E1 Tube Value Unit Min Max 1.4 W -55 150 o C Max Unit 70 ...

Page 4

... O RL=8Ω, P =150mW O G f=1kHz V ∆ f=1kHz =10kΩ, B=22Hz to 22kHz N S SVR f=100Hz, C1=C2=100µF C f=1kHz S BCD Semiconductor Manufacturing Limited 4 Data Sheet AZ2822 Min Typ Max Unit 1 2 100 nA 300 90 120 170 220 900 ...

Page 5

... =0.5W, RL=8Ω, f=1kHz O G f=1kHz V R f=1kHz =10kΩ, B=22Hz to 22kHz N S SVR f=100Hz B P =1W, RL=8Ω O BCD Semiconductor Manufacturing Limited 5 Data Sheet AZ2822 Min Typ Max Unit 1 - 100 nA 1000 320 400 200 2000 mW 800 ...

Page 6

... C2 10nF Figure 5. Test Circuit for Bridge Configuration Dec. 2004 Rev 470 µ AMP 470µ AMP AZ2822 AMP AMP 4.7 C5 0.1 µ AZ2822 BCD Semiconductor Manufacturing Limited 6 Data Sheet AZ2822 C6 0.1 µ ...

Page 7

... Figure 7. Supply Voltage Rejection vs. Frequency 700 THD=10% f=1kHz 600 RL=4 Ω 500 400 300 200 100 0 2 350 400 450 Figure 9. Output Power vs. Supply Voltage BCD Semiconductor Manufacturing Limited 7 Data Sheet AZ2822 AZ2822 1 10 Frequency (kHz) (Stereo) AZ2822 Supply Voltage (V) ...

Page 8

... Dec. 2004 Rev 3.5 THD=10% 3.0 AZ2822 RL=8 Ω 2.5 2.0 1.5 1.0 0.5 0.0 800 1000 2 3 Figure 11. Output Power vs. Supply Voltage 0.7 AZ2822 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.8 1.0 Figure 13. Total Power Dissipation vs. Output Power BCD Semiconductor Manufacturing Limited 8 Data Sheet AZ2822 AZ2822 Supply Voltage (V) (Bridge) AZ2822 Vs=9V f=1kHz RL=32 Ω 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Output Power (W) (Bridge) ...

Page 9

... Figure 16. Total Power Dissipation vs. Output Power (Bridge) Dec. 2004 Rev 1.4 AZ2822 Vs=9V f=1kHz 1.2 RL=16 1.0 0.8 0.6 0.4 0.2 0.0 0.0 1.0 Figure 15. Total Power Dissipation vs. Output Power 0.7 Vs=4.5V f=1kHz 0.6 RL=8 0.5 AZ2822 0.4 0.3 0.2 0.1 0.0 0.0 1.2 1.4 1.6 Figure 17. Total Power Dissipation vs. Output Power BCD Semiconductor Manufacturing Limited 9 Data Sheet AZ2822 AZ2822 Ω 0.5 1.0 1.5 2.0 Output Power (W ) (Bridge) Ω AZ2822 0.2 0.4 0.6 0.8 Output Power (W) (Bridge) ...

Page 10

... Figure 17. Total Power Dissipation vs. Output Power (Bridge) Vs=6V 60 RL=8 Ω Vr=0.5Vrms 0.1 1 Frequency (kHz) Figure 19. Supply Voltage Rejection vs. Frequency (Bridge) Dec. 2004 Rev 0.6 Vs=3V f=1kHz RL=4 AZ2822 0.5 0.4 0.3 0.2 0.1 0.0 0.00 0.05 0.8 1.0 Figure 18. Total Power Dissipation vs. Output Power AZ2822 10 BCD Semiconductor Manufacturing Limited 10 Data Sheet AZ2822 Ω AZ2822 0.10 0.15 0.20 0.25 0.30 Output Power (W) (Bridge) ...

Page 11

... DUAL LOW VOLTAGE POWER AMPLIFIER Mechanical Dimensions 9.2±0.10 1.46±0.31 0.254 0.457 0.13MIN R0.75 Dec. 2004 Rev DIP-8 7.62±0.25 5° 2.54 BCD Semiconductor Manufacturing Limited 11 Data Sheet AZ2822 Unit: mm φ3×0.15±0.05 0.28±0.07 10.0MAX ...

Page 12

... BCD Semiconductor Corporation 3170 De La Cruz Blvd, Suite # 105 Santa Clara, CA 95054-2411, U.S.A Shanghai SIM-BCD Semiconductor manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, PRC Advanced Analog circuits (Shanghai) Corporation 8F, B Zone, 900 Yi Shan Road, Shanghai 200233, PRC BCD Semiconductor (Taiwan) company Limited Room 2210, 22nd Fl, 333, Keelung Road, Sec ...

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