2N4910 Inchange Semiconductor Company, 2N4910 Datasheet
2N4910
Manufacturer Part Number
2N4910
Description
Isc Silicon Npn Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2N4910.pdf
(2 pages)
isc
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
·Low Collector Saturatioin Voltage-
·Wide Area of Safe Operation
APPLICATIONS
·Designed for driver circuits, switching and amplifier
ABSOLUTE MAXIMUM RATINGS(T
THERMAL CHARACTERISTICS
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
SYMBOL
SYMBOL
: V
: V
applications.
R
V
V
V
T
I
P
th j-c
T
CBO
CEO
EBO
I
CM
I
CEO(SUS)
CE(sat)
stg
C
B
Silicon NPN Power Transistor
C
J
= 0.6V(Max.)@ I
= 40V(Min)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Current-Continuous
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
Thermal Resistance,Junction to Case
C
=25℃
PARAMETER
PARAMETER
C
= 1A
a
=25
℃)
-65~200
VALUE
200
40
40
25
5
1
4
1
MAX
7.0
UNIT
W
℃
℃
V
V
V
A
A
A
UNIT
℃/W
isc
Product Specification
2N4910
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2N4910 Summary of contents
Page 1
... C T Junction Temperature J Storage Temperature Range T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case R th j-c isc Website：www.iscsemi.cn ℃) =25 a VALUE UNIT ℃ 200 ℃ -65~200 MAX UNIT ℃/W 7.0 isc Product Specification 2N4910 ...
Page 2
... 5V 50mA ; 500mA ; 0.25A 10V 1MHz test 10V 100kHz E CB test 2 Product Specification 2N4910 MIN TYP. MAX UNIT 40 V 0.6 V 1.3 V 1.3 V 0.1 mA 1.0 0.5 mA 0 100 10 3 MHz 100 pF ...