BCR8PM-12LD Renesas Electronics Corporation., BCR8PM-12LD Datasheet - Page 5
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BCR8PM-12LD
Manufacturer Part Number
BCR8PM-12LD
Description
Triac Medium Power Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.BCR8PM-12LD.pdf
(8 pages)
BCR8PM-12LD
REJ03G1564-0100
Page 5 of 7
Rate of Rise of Off-State Voltage (Tj = 150°C)
160
140
120
100
160
140
120
100
10
10
10
80
60
40
20
80
60
40
20
Rate of Rise of Off-State Voltage (V/µs)
0
0
10
7
5
3
2
7
5
3
2
3
2
1
-60 -40 -20 0
-60 -40 -20 0
1
2 3 5 7
Junction Temperature (°C)
Junction Temperature (°C)
Rev.1.00
Breakover Voltage vs.
Breakover Voltage vs.
Junction Temperature
Junction Temperature
Holding Current vs.
10
20 40 60 80 100 120 140 160
20 40 60 80 100 120 140 160
2
2 3 5 7
Jul 06, 2007
Typical Example
Typical Example
Typical Example
Tj = 150°C
10
III Quadrant
I Quadrant
3
2 3 5 7
10
4
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
140
120
100
10
10
10
10
10
10
80
60
40
20
Commutation Characteristics (Tj = 125°C)
0
7
5
3
2
7
5
3
2
7
5
3
2
Rate of Rise of Off-State Voltage (V/µs)
3
2
1
0
7
5
3
2
7
5
3
2
7
10
10
1
0
-60 -40 -20 0
Main Voltage
Main Current
1
0
Typical Example
Tj = 125°C
I
τ = 500 µs
V
f = 3 Hz
Minimum
Characteristics Value
T
T
T
D
= 4 A
2 3 5 7
2
2
Commutating Current (A/ms)
= 200 V
+ , G +
– , G – Typical Example
Junction Temperature (°C)
2 3
Rate of Decay of On-State
Distribution
(dv/dt)c
Breakover Voltage vs.
Junction Temperature
I
T
Latching Current vs.
τ
10
5 7
Time
Time
20 40 60 80 100 120 140 160
2
(di/dt)c
2 3 5 7
V
10
D
1
T
Typical Example
Typical Example
Tj = 125°C
III Quadrant
2
+ , G –
2 3
10
III Quadrant
I Quadrant
3
I Quadrant
2 3 5 7
5 7
10
10
2
4