MMFT1N10 Motorola, MMFT1N10 Datasheet - Page 4

• Manufacturer Part Number: MMFT1N10
• Description: MEDIUM POWER TMOS FET 1 AMP 100 VOLTS
• Manufacturer: Motorola

FORWARD BIASED SAFE OPERATING AREA
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned on.
Because these curves include the limitations of simultaneous
high voltage and high current, up to the rating of the device,
they are especially useful to designers of linear systems. The
curves are based on an ambient temperature of 25 C and a
maximum junction temperature of 150 C. Limitations for re-
petitive pulses at various ambient temperatures can be de-
termined by using the thermal response curves. Motorola
Application Note, AN569, “Transient Thermal Resistance–
General Data and Its Use” provides detailed instructions.
SWITCHING SAFE OPERATING AREA
that the load line may traverse without incurring damage to
the MOSFET. The fundamental limits are the peak current,
I DM and the breakdown voltage, BV DSS . The switching SOA
is applicable for both turn–on and turn–off of the devices for
switching times less than one microsecond.
current versus re–applied drain voltage when the source–drain diode has undergone forward bias. The curve shows the limita-
tions of I FM and peak V DS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure
9 are present. Full or half–bridge PWM DC motor controllers are common applications requiring CSOA data.
values of dI S /dt require an appropriate derating of I FM , peak V DS or both. Ultimately dI S /dt is limited primarily by device, package,
and circuit impedances. Maximum device stress occurs during t rr as the diode goes from conduction to reverse blocking.
source–drain diode current just prior to the onset of commutation.
tained with dI S /dt of 400 A/ s.
MMFT1N10E
4
The FBSOA curves define the maximum drain–to–source
The switching safe operating area (SOA) is the boundary
The Commutating Safe Operating Area (CSOA) of Figure 10 defines the limits of safe operation for commutated source–drain
Device stresses increase with increasing rate of change of source current so dI S /dt is specified with a maximum value. Higher
V DS(pk) is the peak drain–to–source voltage that the device must sustain during commutation; I FM is the maximum forward
V R is specified at 80% rated BV DSS to ensure that the CSOA stress is maximized as I S decays from I RM to zero.
R GS should be minimized during commutation. T J has only a second order effect on CSOA.
Stray inductances in Motorola’s test circuit are assumed to be practical minimums. dV DS /dt in excess of 10 V/ns was at-
0.001
0.01
1.0
0.1
1.0E–05
1.0E–04
D = 0.5
0.05
0.01
0.02
0.2
0.1
COMMUTATING SAFE OPERATING AREA (CSOA)
1.0E–03
Figure 8. Thermal Response
SINGLE PULSE
t, TIME (s)
1.0E–02
0.001
0.01
Motorola TMOS Power MOSFET Transistor Device Data
0.1
10
1
0.1
Figure 7. Maximum Rated Forward Biased
P (pk)
DUTY CYCLE, D = t 1 /t 2
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
t 1
1.0E–01
t 2
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
1
R JA (t) = r(t) R JA
R JA = 156 C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T A = P (pk) R JA (t)
1 s
1.0E+00
10
500 ms
DC
20 ms
V GS = 20 V
SINGLE PULSE
T A = 25 C
100 ms
100
1.0E+01