MA5114 Dynex, MA5114 Datasheet - Page 3

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MA5114

Manufacturer Part Number
MA5114
Description
Radiation hard 1024x4 Bit Static RAM
Manufacturer
Dynex
Datasheet
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = V
2. Times measurement reference level = 1.5V.
3. Transition is measured at 500mV from steady state.
4. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at T
at T
Note: T
Symbol
A
C
= 25 C with V
C
OUT
IN
A
T
= 25 C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
T
T
T
Symbol
Symbol
WHQX
ELQX
ELQZ
WLQZ
T
T
T
T
T
T
T
T
T
T
T
T
T
AVAVW
AVAVR
WLWH
DVWH
WHAV
ELWH
AVWH
AVQV
AXQX
AVWL
NHDX
ELWL
ELQV
(3,4)
(3,4)
(3,4)
(3,4)
Parameter
Input Capacitance
Output Capacitance
SS
DD
to 3.0V.
= 5V 10%. GROUP A SUBGROUPS 9, 10, 11.
Figure 6: Read Cycle AC Electrical Characteristics
Figure 7: Write Cycle AC Electrical Characteristics
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output Valid
Chip Select to Output Active
Chip Select to Output Tri State
Output Hold from Address Change
Parameter
Write Cycle Tlme
Address Set Up Time
Write Pulse Width
Write Recovery Time
Data Set Up Time
Data Hold Time
Write Enable to Output Tri State
Chip Selection to Write Low
Chip Selection to End of Write
Address Valid to End of Write
Output Active from End to Write
A
Figure 8: Capacitance
Conditions
V
V
= -55 C to +125 C with V
l
O
= 0V
= 0V
Min.
-
-
DD
= 5V 10% and to post 100k Rad(Si) total dose radiation
Typ.
Min
135
Min
135
10
10
10
10
50
35
10
25
85
80
5
5
6
8
5
-
-
Max
Max
135
135
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
10
12
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
pF
pF
MA5114
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