LM3207TL-2.53 National Semiconductor, LM3207TL-2.53 Datasheet - Page 6

• Manufacturer Part Number: LM3207TL-2.53
• Description: LM3207 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers with Integrated Vref LDO; Package: MICRO SMD; No of Pins: 9; Qty per Container: 250; Container: Reel
• Manufacturer: National Semiconductor

Note 4: In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be de-
rated. Maximum ambient temperature (T
) is dependent on the maximum operating junction temperature (T
= 125°C), the maximum power dissipation
A-MAX
J-MAX-OP
of the device in the application (P
), and the junction-to ambient thermal resistance of the part/package in the application (θ
), as given by the following
D-MAX
JA
– (θ
equation: T
= T
× P
).
A-MAX
J-MAX-OP
JA
D-MAX
Note 5: Junction-to-ambient thermal resistance (θ
) is taken from thermal measurements, performed under the conditions and guidelines set forth in the JEDEC
JA
standard JESD51-7.
Note 6: Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm.
Due to the pulsed nature of the testing T
= T
for the electrical characteristics table.
A
J
Note 7: The parameters in the electrical characteristics table are tested under open loop conditions at PV
= 3.6V. For performance over the input voltage range
IN
and closed loop results refer to the datasheet curves.
Note 8: Shutdown current includes leakage current of PFET.
Note 9: I
specified here is when the part is operating at 100% duty cycle.
Q
Note 10: Current limit is built-in, fixed, and not adjustable. Refer to datasheet curves for closed loop data and its variation with regards to supply voltage and
temperature. Electrical Characteristic table reflects open loop data (FB = 0V and current drawn from SW pin ramped up until cycle by cycle limit is activated).
Closed loop current limit is the peak inductor current measured in the application circuit by increasing output current until output voltage drops by 10%.
Note 11: Ripple voltage should measured at C
electrode on good layout PC board and under condition using suggested inductors and capacitors.
OUT
Note 12: Transient Pull-up current (I
) and Transient Pull-down Current (I
) will be tested which are inversely proportional to charge and discharge times
PUT
PDT
t
and t
respectively.
LDO, ON
LDO, OFF
Note 13: Dropout voltage is the voltage difference between the input and the output at which the output voltage drops to 100 mV below its nominal value.
Typical Performance Characteristics
(Circuit in Figure 3, See Operation Description Section),
PV
= EN = 3.6V, L = 3.0µH, (DCR = 0.12Ω, FDK MIPW3226D3R0M); C
= 10µF, (6.3V, 0805, TDK C2012X5R0J106K); C
IN
IN
OUT
= 4.7µF, (6.3V, 0603, TDK C1608X5R0J475M), C
= 100nF, 10V, (0402, TDK C1005X5R1A104KT) (or 220nF, (6.3V, 0402,
LDO
TDK C1005X5R0J224KT)) can be used. T
= 25°C unless otherwise specified.
A
LDO Typical Performance Curves (2.875 Option)
LDO Voltage vs Load Current
LDO Dropout Voltage vs Load Current
(C
= 100nF)
= 100nF), (Note 13)
(C
LDO
LDO
20165378
20165330
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