T35L3232B TM Technology Inc., T35L3232B Datasheet
T35L3232B
Related parts for T35L3232B
T35L3232B Summary of contents
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... READ cycle. This device also incorporates pipelined enable circuit for easy depth expansion without penalizing system performance Preliminary T35L3232B The T35L3232B SRAM integrates 32,768 x 32 chip enable ( CE2 and CE2), burst control ADSC ADSP ...
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... BYTE 4 BYTE 4 WRITE DRIVER 8 BYTE 3 BYTE 3 WRITE DRIVER 8 BYTE 2 BYTE 2 WRITE DRIVER 8 BYTE 1 BYTE 1 WRITE DRIVER ENABLE REGISTER P. 2 Preliminary T35L3232B OUTPUT 32K SENSE BUFFERS MEMORY AMPS ARRAY Publication Date: FEB. 2000 Revision:0 ¡ ...
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... P. 3 Preliminary T35L3232B ...
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... ADSS t ADSH A2 t AAS t AAH ADV suspends burst. t OEQ OEHZ t OELZ t KQX Q(A1) Q(A2) Q(A2+1) (NOTE1 Preliminary T35L3232B A3 Burst continued with new base address. Deselect cycle. Q(A2+2) Q(A2+3) Q(A2) Q(A2+1) Burst wraps around to its inital state. BURST READ DON' T CARE UNDEFINED Publication Date: FEB. 2000 Revision:0 ...
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... EHZ ( ( ( (NOTE Preliminary T35L3232B ( ( Q( und DON'T CARE UNDEFINED Publication Date: FEB ...
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... HIGH to permit a WRITE to the loaded address. ADV 5. Full width WRITE can be initiated by GW LOW or GW HIGH and BWE , BW1- BW4 LOW. Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T35L3232B ADSC extends burst (NOTE5) (NOTE4) ADV suspnds burst ...
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... Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice OELZ D(A3) t OEHZ t KQ Q(A2) Q(A3) Single WRIT E Pass-through READ P. 15 Preliminary T35L3232B A5 D(A5) (NOTE1) Q(A4) Q(A4+1) Q(A4+2) Q(A4+3) BURST READ Publication Date: FEB. 2000 A6 D(A6) Back-to-Back WRITEs DON'T CARE UNDEFINED Revision:0.A ...
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... ( ( Preliminary T35L3232B ( ITE s ...
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... Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T35L3232B DIMENTION IN MM 3.302(MAX) 2.845¡Ó0.127 0.102(MIN) 0.300+0.102-0.051 14.000¡Ó0.127 20.000¡Ó0.127 0.650¡Ó0.152 17.200¡ ...
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... Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T35L3232B DIMENTION IN MM 1.600(MAX) 1.400¡Ó0.050 0.050(MIN) 0.320+0.060-0.100 14.000¡Ó0.100 20.000¡Ó0.100 0.650¡ ...
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... Address Status Processor: This active LOW input, along with being LOW, causes a new external address to be registered and a READ cycle is initiated using the new address Preliminary T35L3232B DESCRIPTION being LOW. lines and must meet . This input is ADSP Publication Date: FEB ...
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... DQ32. Input data must meet setup and hold times around the rising edge of CLK. Supply Power Supply: 3.3V +10%/-5% Ground Ground: GND I/O Supply Output Buffer Supply: 3.3V +10%/-5% I/O Ground Output Buffer Ground: GND - No Connect: These signals are not internally conntected Preliminary T35L3232B DESCRIPTION A READ or WRITE cycle is Publication Date: FEB. 2000 Revision:0.A ...
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... Second Address Third Address (internal) A...A01 A...A10 A...A11 A...A00 BWE BW1 Preliminary T35L3232B Fourth Address (internal) (internal) A...A10 A...A11 A...A11 A...A10 A...A00 A...A01 A...A01 A...A00 Fourth Address (internal) (internal) A...A10 A...A11 A...A11 A...A00 A...A00 A...A01 A ...
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... Current Current BW1 BW2 , BW2 = enables write to DQ9-DQ16. =enables write to DQ25-DQ32. OE and ZZ must meet setup and hold times around the rising edge ( LOW OE P.7 Preliminary T35L3232B ...
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... Vcc SYM. TYP I CC ADSP ADSC , , BWE , all other I SB1 TBD VCC - 0.2; I SB2 TBD SB3 TBD SB4 TBD P.8 Preliminary T35L3232B greater than those Maximum Ratings" MIN MAX UNITS 2 VCCQ + 0.3 V -0.3 0 2.4 V ...
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... OEQ 5 t OELZ OEHZ 1.7 2.0 t ADSS 1.7 2.0 t AAS 1.7 2 1.7 2 1.7 2.0 t CES 1.7 2 0.5 0.5 t ADSH 0.5 0.5 t AAH 0.5 0 0.5 0 0.5 0.5 t CEH 0.5 0.5 P.9 Preliminary T35L3232B ( C;VCC=3.3V +0.3V/-0.165V) UNITS -4 2 2.0 ns 2 ...
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... Deselected means the device is in POWER-DOWN mode as defined in the truth table. "Device Selected" means the device is active. 13.Typical values are measured at 3.3V and 20ns cycle time. 14.MODE pin has an internal pull-up and exhibits an input leakage current of P.10 Preliminary T35L3232B TYP MAX UNITS NOTES SYM ...
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... ohm 0 Fig. 1 output load equivalent Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T35L3232B 1.5V P.11 3. Fig. 2 output load equivalent Publication Date: FEB. 2000 Revision:0 ...
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... MODE must not be initiated until valid pending operations are completed. SYMBOL KC) t RZZ P.12 Preliminary T35L3232B is guaranteed after ZZ Therefore, SNOOZE MIN MAX UNITS KC RZZ DON' T CARE Publication Date: FEB. 2000 ...