AN1941 Freescale Semiconductor / Motorola, AN1941 Datasheet - Page 2

• Manufacturer Part Number: AN1941
• Description: Modeling Thermal Effects in RF LDMOS Transistors
• Manufacturer: Freescale Semiconductor / Motorola

ROOT MODEL VS. MET MODEL SIMULATION
SETUP
generated using a basic DC simulation (DC1) and a parameter
sweep (Sweep1) (Figure 2). The simulator outputs IV curves
for the Root and the MET models superimposed on each
other.
• Variables are defined as I
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AN1941
2
In the Root vs. MET model simulation, a family of curves is
(∆voltage, ∆V = ∆°C, from the dynamic heating
effect).
Figure 2. ADS Schematic Used for MRF19125 Root vs. MET Model Simulation
DS
, V
GS
Freescale Semiconductor, Inc.
, V
For More Information On This Product,
DS
and T
Go to: www.freescale.com
FLANGE
MOTOROLA SEMICONDUCTOR APPLICATION INFORMATION
• The DUT is terminated with 50 Ω termination ports.
• DC blocking caps with values appropriate for the
• Parameter Sweep is set up with V
• DC1 calls on a separate simulation named Sweep1,
band of operation are used.
global sweep variable.
which then sweeps V
GS
.
DS
defined as the