BTA08-200 Sirectifier Semiconductors, BTA08-200 Datasheet - Page 5

• Manufacturer Part Number: BTA08-200
• Description: Discrete Triacs Non-isolated/isolated
• Manufacturer: Sirectifier Semiconductors

1000
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6
5
4
3
2
1
0
F ig. 6:
current for a
tp < 10ms, a nd corres ponding value of I²t.
F ig. 8-1: R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typica l
values ). S nubberles s & L ogic L evel Types
F ig. 9: R elative varia tion of critical rate of
decreas e
temperature.
100
0
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
10
0.1
0.01
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
IT S M (A ), I² t (A ² s )
T W
25
Non-repetitive s urge peak on-s tate
dI/dt limitation:
of main
50A /µ s
1.0
0.10
(dV /dt)c (V /µ s )
s inus oida l puls e
50
T j(° C )
Discrete Triacs(Non-Isolated/Isolated)
tp (ms )
current vers us
75
10.0
1.00
BTB/BTA08
T 835/C W/B W
100
with width
T j initial=25° C
IT S M
I² t
T 810/S W
junction
10.00
100.0
125
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.5
2.0
1.5
1.0
0.5
0.0
100
F ig. 7: R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
F ig. 8-2: R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typical
values ). S tandard Types
F ig. 10: DPAK and D
junction to ambient vers us copper s urface under
tab (printed circuit board F R 4, copper thicknes s :
35 m).
90
80
70
60
50
40
30
20
10
-40
0.1
0
0
IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ]
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
R th(j-a) (° C /W)
B
D² P AK
IH & IL
-20
C
4
IG T
8
DPAK
0
12
1.0
20
(dV /dt)c (V /µ s )
16
40
S (c m² )
2
T j(° C )
PAK T hermal resis tance
20
60
24
10.0
80
28
100
32
120
36
100.0
140
40