GT6924E GTM, GT6924E Datasheet - Page 2

• Manufacturer Part Number: GT6924E
• Description: N-CHANNEL MOSFET
• Manufacturer: GTM

Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Schottky Characteristics (Tj = 25 : : : : )
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Notes: 1. Pulse width limited by Max. junction temperature.
GT6924E
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
Parameter
Parameter
Parameter
2
2
2
2
copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
:
:
Symbol
R
Symbol
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
I
DSS
g
Q
d(on)
d(off)
C
V
T
T
RM
oss
DSS
iss
rss
SD
fs
gs
gd
g
r
f
F
T
/
Tj
Min.
Min.
Min.
0.5
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.02
Typ.
Typ.
100
125
1.3
0.3
0.5
21
53
38
17
12
21
1
-
-
-
-
-
-
-
-
-
-
Max.
Max.
Max.
±10
600
850
100
:
1.2
1.2
0.5
10
60
1
2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
Unit
m
uA
uA
uA
nC
Ns
pF
uA
pF
V
V
S
V
V
V
Reference to 25 , I
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
I
I
V
V
D
D
S
F
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
R
R
=600mA
=600mA
=750mA, V
=500mA
=16.7
=20V
=10V
=3.3
=0, I
=V
=5V, I
= ± 6V
=20V, V
=16V, V
=4.5V, I
=2.5V, I
=16V
=4.5V
=10V
=5V
=0V
=10V
Test Conditions
Test Conditions
Test Conditions
ISSUED DATE :2006/01/25
REVISED DATE :
GS
D
, I
D
=250uA
=600mA
D
D
D
GS
GS
=250uA
=1A
=0.5A
GS
=0
=0
=0V
Page: 2/4
:
D
=1mA