GT3585 GTM, GT3585 Datasheet - Page 3

• Manufacturer Part Number: GT3585
• Description: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: GTM

P-Channel Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature.
GT3585
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
Parameter
Parameter
2
2
2
2
2
copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
2
Symbol
R
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
DSS
g
Q
d(on)
d(off)
Q
T
T
T
oss
DSS
iss
rss
SD
fs
gs
gd
g
r
f
rr
rr
/
Tj
Min.
Min.
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.01
Typ.
Typ.
270
4.0
17
16
70
55
20
15
5
1
2
6
5
-
-
-
-
-
-
-
-
-
Max.
±100
Max.
-1.2
120
160
300
430
-1.2
-25
:
-1
8
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
m
nA
uA
uA
nC
pF
nC
ns
ns
V
V
S
V
V
Reference to 25 : , I
V
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/ s
D
D
S
S
GS
DS
DS
GS
DS
DS
GS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
=-2A
=-1A
=-1.2A, V
=-2A, V
=10
=3.3
=0, I
=V
=-5V, I
= ±12V
=-20V, V
=-16V, V
=-10V, I
=-4.5V, I
=-2.5V, I
=-16V
=-4.5V
=-10V
=-10V
=0V
=-20V
Test Conditions
Test Conditions
ISSUED DATE :2006/02/16
REVISED DATE :
GS
D
, I
GS
=-250uA
D
D
GS
=-2A
D
=0V
=-250uA
D
D
GS
GS
=-2.8A
=-2.5A
=-2A
=0V
=0
=0
Page: 3/7
D
=-1mA