CY20AAJ-8F Powerex Power Semiconductors, CY20AAJ-8F Datasheet - Page 2

• Manufacturer Part Number: CY20AAJ-8F
• Description: Nch IGBT for STROBE FLASHER
• Manufacturer: Powerex Power Semiconductors

ELECTRICAL CHARACTERISTICS
Figure1. MAXIMUM PULSE COLLECTOR CURRENT
APPLICATION EXAMPLE
V
V
I
I
V
CES
GES
Symbol
GE (th)
(BR) CES
(BR) GES
V
G
Collector-emitter breakdown voltage
Gate-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
160
120
R
80
40
G
0
0
Parameter
IXe
GATE-EMITTER VOLTAGE V
C
M
= 400 F
IGBT
2
V
CE
Vtrig
(Tj = 25 C)
4
I
I
V
V
V
C
G
CE
GE
CE
= 1mA, V
= 100 A, V
= 400V, V
= 6V, V
= 10V, I
6
+
–
C
GE
M
GE
C
CE
(V)
= 1mA
GE
= 0V
CE
= 0V
8
= 0V
= 0V
V
Test conditions
CM
TRIGGER
SIGNAL
IGBTE GATE
VOLTAGE
Xe TUBE
CURRENT
Nch IGBT for STROBE FLASHER
Vtrig
I
V
XE
G
Min.
450
—
—
—
8
CY20AAJ-8F
Limits
Typ.
—
—
—
—
—
MITSUBISHI IGBT
Max.
1.5
10
—
—
10
Sep. 2000
Unit
V
V
V
A
A