AN2123 STMicroelectronics, AN2123 Datasheet - Page 12

• Manufacturer Part Number: AN2123
• Description: TD351 Advanced IGBT Driver Principles of operation and application
• Manufacturer: STMicroelectronics

Application schematic
Table 1. Recommended gate resistors
IGBT modules suitable for TD351 are indicated in bold. For the FP50R12KE3 and 6MBI75S-120
modules, the source (charging) peak current will be limited to 0.75 A in worst-case conditions instead of
the theoretical 0.8 A or 0.9 A peak values; this usually doesn’t affect the application performance.
An external buffer will be required for higher power applications.
A reference schematic is shown in
A very simple voltage regulator is used in front of the TD351 high-side driver. In this way, the bootstrap
supply voltage can be made significantly higher than the target driver supply, and the voltage across the
Cb bulk capacitor can exhibit large voltage variations during each cycle with no impact on the driver
operation.
Gate resistor Rg depends on the IGBT. It should be noted that the applications only use two supplies
referenced to the ground level.
12/15
FPxxR12KE3
6MBIxxS-120
App. Power
Eupec:
Rgate
Rgate
Ipeak
Ipeak
Fuji:
0.12
120
1.5
10
Figure
0.2
0.2
15
75
15
82
2
17. It uses a bootstrap principle for the high-side driver supply.
0.4
0.3
25
36
25
51
3
0.45
35
33
4
0.55
40
27
5
0.8
0.6
50
18
50
24
7
0.9
75
75
16
11
5
3
100
1.3
12
15
AN2123
kW
Ω
Ω
A
A
A
A