BFT93W Philips Semiconductors, BFT93W Datasheet - Page 15

• Manufacturer Part Number: BFT93W
• Description: PNP 4 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
Table 9 Common emitter scattering parameters: V
Table 10 Noise data: V
March 1994
(MHz)
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
PNP 4 GHz wideband transistor
100
200
300
400
500
600
700
800
900
f
40
(MHz)
1000
MAGNITUDE
500
f
(ratio)
0.837
0.781
0.670
0.592
0.547
0.523
0.507
0.495
0.487
0.481
0.478
0.483
0.493
0.499
0.501
0.509
0.529
0.550
0.564
0.564
0.569
s
11
CE
ANGLE
= 10 V; I
(deg)
128.7
138.6
146.1
152.5
158.1
163.1
171.8
178.2
176.9
172.0
166.5
161.8
158.8
156.7
153.7
150.0
116.1
16.8
40.2
73.9
98.6
(dB)
F
2.00
2.50
MAGNITUDE
min
C
= 5 mA.
10.061
11.098
(ratio)
8.331
6.727
5.490
4.616
3.971
3.476
3.094
2.782
2.532
2.155
1.895
1.694
1.541
1.418
1.317
1.228
1.148
1.100
1.051
s
21
ANGLE
CE
166.4
150.4
130.4
107.3
100.5
116.7
(deg)
94.9
90.3
86.3
82.6
79.5
73.7
68.4
63.6
59.6
55.9
52.6
49.0
45.9
42.8
40.2
= 10 V; I
15
(ratio)
0.340
0.380
MAGNITUDE
C
(ratio)
0.020
0.046
0.073
0.088
0.098
0.106
0.121
0.129
0.136
0.143
0.156
0.171
0.185
0.198
0.212
0.224
0.236
0.246
0.259
0.274
0.114
= 5 mA.
s
12
opt
ANGLE
(deg)
80.4
67.6
54.7
48.3
45.8
45.2
45.6
46.4
47.3
48.2
49.3
51.0
52.4
53.2
54.4
55.5
56.5
57.2
57.5
58.2
58.9
105.0
(deg)
MAGNITUDE
73.0
(ratio)
0.947
0.856
0.674
0.537
0.447
0.389
0.352
0.327
0.309
0.294
0.279
0.250
0.234
0.232
0.233
0.227
0.215
0.215
0.232
0.253
0.262
s
22
Product specification
ANGLE
BFT93W
(deg)
100.1
102.7
10.2
23.6
38.2
46.3
51.2
54.5
56.5
57.6
58.0
57.8
57.8
59.2
63.8
69.2
71.8
74.1
79.5
88.7
96.4
0.440
0.360
R
n
(dB)
36.0
29.9
23.6
19.9
17.3
15.4
13.8
12.5
10.4
G
11.4
9.5
8.1
7.0
6.1
5.3
4.6
4.0
3.6
3.1
2.8
2.4
UM