SI9933CDY Vishay, SI9933CDY Datasheet

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SI9933CDY

Manufacturer Part Number
SI9933CDY
Description
Dual P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI9933CDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9933CDY-T1-GE3
Manufacturer:
Vishay
Quantity:
1 900
Part Number:
SI9933CDY-T1-GE3
Manufacturer:
VISHAY/PBF
Quantity:
73 290
Part Number:
SI9933CDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
180
Part Number:
SI9933CDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9933CDY-T1-GE3
0
Company:
Part Number:
SI9933CDY-T1-GE3
Quantity:
70 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
Ordering Information: Si9933CDY-T1-E3 (Lead (Pb)-free)
DS
- 20
(V)
C
0.058 at V
0.094 at V
G
G
= 25 °C.
S
S
1
1
2
2
R
1
2
3
4
DS(on)
Si9933CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
GS
GS
Top View
(Ω)
= - 4.5 V
= - 2.5 V
J
SO-8
= 150 °C)
b, d
Dual P-Channel 20-V (D-S) MOSFET
8
7
6
5
I
D
(A)
- 4
- 4
D
D
D
D
1
1
2
2
a, e
A
= 25 °C, unless otherwise noted
Q
g
Steady State
(Typ.)
8
New Product
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• 100 % R
• Load Switch
• DC/DC Converter
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
g
stg
and UIS Tested
®
G
Power MOSFET
1
Typical
P-Channel MOSFET
52
32
Limit
S
D
1
1
- 50 to 150
- 4
- 3.8
- 1.7
1.28
Limit
± 12
- 2.5
Maximum
- 20
- 20
2
- 4
- 4
1.8
3.1
- 6
b, c, e
b, c
2
e
e
b, c
b, c
b, c
62.5
Vishay Siliconix
40
G
Si9933CDY
2
P-Channel MOSFET
www.vishay.com
D
S
°C/W
2
2
Unit
RoHS
COMPLIANT
Unit
mJ
°C
W
V
A
1

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SI9933CDY Summary of contents

Page 1

... Top View Ordering Information: Si9933CDY-T1-E3 (Lead (Pb)-free) Si9933CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current ...

Page 2

... Si9933CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... GS 1 1200 900 600 300 15 20 1.6 1.5 1.4 1.3 1 1.1 1.0 0.9 0.8 0 Si9933CDY Vishay Siliconix ° 125 ° °C C 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si9933CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.08 0.06 0. °C J 0.02 0 0.8 1.0 1 250 µ ...

Page 5

... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si9933CDY Vishay Siliconix 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si9933CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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