SEP8505 Honeywell, SEP8505 Datasheet
SEP8505
Available stocks
Related parts for SEP8505
SEP8505 Summary of contents
Page 1
... Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington DESCRIPTION The SEP8505 is a gallium arsenide infrared emitting diode transfer molded in a T-1 red plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification ...
Page 2
... SEP8505 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡ ...
Page 3
... SEP8505 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1. Forward current - mA Fig. 5 Spectral Bandwidth 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 890 910 930 950 970 Wavelength - nm 38 Fig. 2 Radiant Intensity vs Forward Current gra_027 ...
Page 4
... SEP8505 GaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature 0.2 0.1 -50 -25 0 +25 + Free-air temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible ...