BUK215-50YT Philips Semiconductors, BUK215-50YT Datasheet - Page 7
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BUK215-50YT
Manufacturer Part Number
BUK215-50YT
Description
TOPFET High Side Switch SMD Version
Manufacturer
Philips Semiconductors
Datasheet
1.BUK215-50YT.pdf
(13 pages)
www.DataSheet4U.com
Philips Semiconductors
June 2000
TOPFET high side switch
SMD version
Fig.4. High side switch measurements schematic.
Fig.6. Typical on-state characteristics, T
50
40
30
20
10
0
Fig.5. Typical on-state resistance, t
80
60
40
20
R
0
0
I
-50
L
ON
VBG
R
/ A
ON
= f(T
I
/ mOhm
L
(current and voltage conventions)
= f(T
j
); parameter V
0
VIG
j
); parameter V
VSG
V
BG
50
= 6 V
V
BL
1
T
j
RS
/ V
IS
/
BG
II
O
C
; condition I
BG
S
I
100
9 V =< V
; t
TOPFET
IG
IB
p
HSS
V
G
B
= 250 µs
BG
/ V
BG
BUK215-50YT
p
L
150
BUK215-50YT
=< 35 V
= 300 µs.
L
VBL
IL
> = 8
typ
= 10 A
j
= 25 ˚C.
VLG
.
2
7
6
5
200
7
40
38
36
34
32
30
28
26
24
22
20
I
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
G
Fig.8. Typical on-state resistance,T
Fig.7. Typical supply characteristics, 25 ˚C.
1
R
0
0
R
= f(T
I
BG(ON)
-50
ON
ON
Fig.9. Typical operating supply current.
I
G
/ mOhm
/ mA
= f(V
UNDERVOLTAGE
j
); parameters I
/ mA
10
SHUTDOWN
lL > IL(TO)
l
OPERATING V
l
L
L
> I
QUIESCENT V
I
BG
= 0 A
G
0
L(TO)
); condition I
= f(V
20
BG
); parameter V
50
30
IG
L
V
V
, V
IG
T
= 5 V
BG
BG
10
j
= 0 V
/
/ V
L
O
BG
/ V
typ.
OVERVOLTAGE
C
= 10 A; t
40
SHUTDOWN
; condition V
100
R
CLAMPING
ON
Product Specification
BUK215-50YT
9 V <= V
max
50
IG
V
p
BUK215-50YT
BG
= 300 µs
150
BUK215-50YT
BUK215-50YT
j
BG
= 50 V
= 25 ˚C.
<= 35 V
IG
60
Rev 1.000
= 5 V
200
100
70