BUK436-800B Philips Semiconductors, BUK436-800B Datasheet
BUK436-800B
Related parts for BUK436-800B
BUK436-800B Summary of contents
Page 1
... Drain-source on-state DS(ON) resistance PIN CONFIGURATION CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product specification BUK436W-800A/B MAX. MAX. UNIT -800A -800B 800 800 4 3.5 125 125 3 4 SYMBOL MAX. UNIT - 800 - 800 - 30 -800A -800B - 4.0 3 ...
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... V = 800 ˚ 800 =125 ˚ BUK436-800A 1.5 A BUK436-800B D CONDITIONS 1 MHz 2 gen ...
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... Fig.5. Typical output characteristics BUK456-800A 100 100 ms 0 1000 = 25 ˚C Fig.6. Typical on-state resistance Product specification BUK436W-800A/B Zth j-mb / (K/W) BUKx56- 0.5 0.2 0.1 0.05 0. 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter ...
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... V j BUK4y6-800A ˚ 10000 80 100 120 140 Fig.12. Typical capacitances 1 f Product specification BUK436W-800A/B VGS(TO max. 4 typ. 3 min -60 -40 - 100 120 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA; V ...
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... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions parameter February 1998 BUK4y6-800 10 VDS / V =160 640 f Product specification BUK436W-800A BUK4y6-800A 150 VSDS / V Fig.14. Typical reverse diode current. ); conditions parameter T SDS Rev 1.000 ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelopes. 3. Epoxy meets UL94 V0 at 1/8". February 1998 16 max 5.3 7.3 seating 15.5 max plane 2 1.1 0.4 M 5.45 5.45 Fig.15. SOT429 (TO247); pin 2 connected to mounting base. 6 Product specification BUK436W-800A/B 5.3 max 1.8 o 3.5 max 0.9 max Rev 1.000 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1998 BUK436W-800A/B 7 Product specification Rev 1.000 ...