BUK438-800A Philips Semiconductors, BUK438-800A Datasheet - Page 4

• Manufacturer Part Number: BUK438-800A
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
February 1998
PowerMOS transistor
Fig.9. Normalised drain-source on-state resistance.
I
a = R
D
Fig.8. Typical transconductance, T
= f(V
2
1
0
-60 -40
Fig.7. Typical transfer characteristics.
20
15
10
15
10
a
DS(ON)
5
0
5
0
GS
0
0
g
ID / A
gfs / S
) ; conditions: V
fs
/R
= f(I
-20
DS(ON)25 ˚C
D
); conditions: V
0
2
5
20
= f(T
VGS / V
Tj / C
Tj / C = 25
40
ID / A
DS
4
j
Normalised RDS(ON) = f(Tj)
); I
60
= 25 V; parameter T
10
D
= 4 A; V
DS
80
BUK4y8-800A
BUK4y8-800A
= 25 V
6
100 120 140
150
j
15
= 25 ˚C .
GS
= 10 V
8
j
4
V
Fig.12. Typical capacitances, C
I
C = f(V
GS(TO)
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
4
3
2
1
0
D
10000
-60
1000
= f(V
100
VGS(TO) / V
Fig.11. Sub-threshold drain current.
10
0
Fig.10. Gate threshold voltage.
ID / A
0
= f(T
-40
GS)
DS
); conditions: V
-20
; conditions: T
j
); conditions: I
1
0
20
2 %
max.
typ.
min.
20
Tj / C
40
SUB-THRESHOLD CONDUCTION
VGS / V
2
BUK438W-800A/B
VDS / V
j
GS
60
D
= 25 ˚C; V
= 1 mA; V
= 0 V; f = 1 MHz
typ
80
Product specification
3
100 120 140
iss
, C
98 %
DS
40
DS
oss
= V
4
, C
= V
Rev 1.000
Ciss
Coss
Crss
GS
rss
GS
.