BUK481-60A Philips Semiconductors, BUK481-60A Datasheet

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BUK481-60A

Manufacturer Part Number
BUK481-60A
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
automotive and general purpose
switching applications.
PINNING - SOT223
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
1 Temperature measured at solder joint on drain tab.
November 1995
PowerMOS transistor
SYMBOL
V
V
I
I
I
P
T
T
SYMBOL PARAMETER
R
R
D
D
DM
PIN
V
stg
j
DS
DGR
tot
th j-sp
th j-amb
1
2
3
4
GS
gate
drain
source
drain (tab)
From junction to solder point
From junction to ambient
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
1
D
DS
tot
j
DS(ON)
CONDITIONS
Mounted on any PCB .
Mounted on PCB of Fig.18
CONDITIONS
R
T
T
-
-
T
T
-
-
amb
amb
amb
amb
1
GS
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
= 20 k
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
1
2
4
3
V
GS
= 10 V
MIN.
SYMBOL
-55
-
-
-
-
-
-
-
-
MIN.
-
-
g
TYP.
Product specification
MAX.
0.35
MAX.
150
14
1.6
1.5
60
150
150
1.6
6.4
1.5
-
60
60
30
1
BUK481-60A
d
s
MAX.
17
85
Rev 1.100
UNIT
UNIT
˚C
˚C
W
V
V
V
A
A
A
UNIT
˚C
K/W
K/W
W
V
A

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BUK481-60A Summary of contents

Page 1

... CONDITIONS - ˚C amb T = 100 ˚C amb ˚C amb ˚C amb - - CONDITIONS 1 Mounted on any PCB . Mounted on PCB of Fig.18 1 Product specification BUK481-60A MAX. UNIT 60 1.6 1.5 W 150 ˚C 0. SYMBOL MIN. MAX. UNIT - 1.6 A ...

Page 2

... CONDITIONS - - 1.6 A; -dI /dt = 100 - CONDITIONS < ˚C amb 2 Product specification BUK481-60A MIN. TYP. MAX. UNIT 2.1 3.0 4 0.1 1 100 nA - 0.22 0.35 MIN. TYP. MAX. UNIT 1.0 1.5 - ...

Page 3

... VDS / ˚C amb = f single pulse; parameter BUK481-60A VGS / VDS / f(V ); parameter RDS(ON) / Ohm BUK481-60A 1 0.9 5 5.5 6 6.5 0.8 7 0.7 0.6 0.5 0.4 0.3 0.2 VGS / 0 ˚ f(I ); parameter V DS(ON 6 ...

Page 4

... Fig.10. Gate threshold voltage. = f(T ); conditions 0.1 mA SUB-THRESHOLD CONDUCTION SIZE typ VGS / V Fig.11. Sub-threshold drain current. ); conditions ˚ BUK481-60A VDS / iss oss ); conditions MHz Ciss Coss Crss , C ...

Page 5

... Fig.15. Normalised avalanche energy rating BUK481-60A 25 VGS 0 1.5 Fig.16. Avalanche energy test circuit Product specification BUK481-60A Normalised Avalanche Energy 100 120 140 Tamb f(T ); conditions 1.6 A DSS amb VDS - T.U. RGS shunt 2 W 0.5 LI ...

Page 6

... Fig.17. soldering pattern for surface mounting SOT223. November 1995 PRINTED CIRCUIT BOARD Dimensions in mm. 60 6.3 Fig.18. PCB for thermal resistance and power rating PCB: FR4 epoxy glass (1.6 mm thick), copper 6 Product specification BUK481-60A Dimensions in mm 4.5 4 for SOT223. laminate (35 m thick). ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". November 1995 6.7 6.3 3.1 0.32 0.24 2.9 0.10 0. max 1.05 2.3 1.8 max 0.85 4.6 Fig.19. SOT223 surface mounting package. 7 Product specification BUK481-60A B 0 3.7 7.3 6.7 3 0.80 M 0.1 B 0.60 (4x) Rev 1.100 M A ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 8 Product specification BUK481-60A Rev 1.100 ...

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