BUK482-200A Philips Semiconductors, BUK482-200A Datasheet

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BUK482-200A

Manufacturer Part Number
BUK482-200A
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
field-effect power transistor in a
plastic envelope suitable for surface
mounting featuring high avalanche
energy capability, stable blocking
voltage, fast switching and high
thermal
Intended for use in Switched Mode
Power Supplies (SMPS) and general
purpose switching applications.
PINNING - SOT223
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
AVALANCHE LIMITING VALUE
January 1998
PowerMOS transistor
SYMBOL PARAMETER
V
V
I
I
I
I
P
T
T
SYMBOL PARAMETER
W
D
DM
DR
DRM
PIN
V
stg
j
DS
DGR
tot
DSS
1
2
3
4
GS
gate
drain
source
drain (tab)
cycling
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak
value)
Source-drain diode current
(DC)
Source-drain diode current
(pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
Drain-source non-repetitive
unclamped inductive turn-off R
energy
enhancement
DESCRIPTION
performance.
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
R
D
CONDITIONS
R
T
T
T
T
T
T
CONDITIONS
I
DS
tot
DS(ON)
D
sp
sp
sp
sp
sp
sp
GS
GS
= 2 A ; V
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
= 50
1
DD
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
1
50 V ; V
2
T
T
j
= 100˚C prior to surge
j
4
= 25˚C prior to surge
GS
3
= 10 V ;
SYMBOL
MIN.
MIN.
-55
g
-
-
-
-
-
-
-
-
-
-
-
-
BUK482-200A
Product specification
MAX.
MAX.
MAX.
d
200
s
200
200
150
150
2.0
8.3
0.9
2.0
1.3
8.0
2.0
8.0
8.3
30
50
8
Rev 1.000
UNIT
UNIT
UNIT
mJ
mJ
W
W
˚C
˚C
V
A
V
V
V
A
A
A
A
A

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BUK482-200A Summary of contents

Page 1

... ˚ ˚ ˚C sp CONDITIONS 25˚C prior to surge 100˚C prior to surge j 1 Product specification BUK482-200A MAX. UNIT 200 V 2.0 A 8.3 W 0.9 SYMBOL MIN. MAX. UNIT - 200 V - 200 2 ...

Page 2

... 160 2. GEN -dI /dt = 100 100 Product specification BUK482-200A MIN. TYP. MAX. UNIT - - 15 K/W - 156 - K K/W MIN. TYP. MAX. UNIT 200 - - V 2.0 3 ...

Page 3

... VDS / V Fig.4. Safe operating area. T amb & f single pulse; parameter BUK482-200A VGS = VDS / f(V ); parameter BUK482-200A RDS(ON) / Ohms 2 VGS = 6 5 f(I ); parameter V DS(ON 100 us ...

Page 4

... V GS(TO SUB-THRESHOLD CONDUCTION 1E-01 1E- typ 1E-03 1E-04 1E-05 1E- VGS / V Fig.11. Sub-threshold drain current. = f(V ; conditions ˚ GS) j BUK482-200A Ciss Coss Crss 100 150 VDS / iss ); conditions MHz 200 , C ...

Page 5

... V 100 Fig.15. Normalised avalanche energy rating. DS VGS 1 Product specification BUK482-200A WDSS% Normalised Avalanche Energy 100 120 Tamb f(T ); conditions DSS amb D L VDS T.U. RGS shunt Fig.16. Avalanche energy test circuit. ...

Page 6

... Philips Semiconductors PowerMOS transistor PRINTED CIRCUIT BOARD Fig.17. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick). January 1998 Product specification BUK482-200A Dimensions in mm. 18 4.5 Rev 1.000 ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". January 1998 3.1 0.32 0.24 2.9 0.10 0. max 1.05 2.3 1.8 max 0.85 Fig.18. SOT223 surface mounting package. 7 Product specification BUK482-200A 6.7 6 7.3 3.7 3.3 6 0.80 0 0.60 (4x) 4.6 0 Rev 1.000 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1998 8 Product specification BUK482-200A Rev 1.000 ...

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