BUK7575-55 Philips Semiconductors, BUK7575-55 Datasheet

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BUK7575-55

Manufacturer Part Number
BUK7575-55
Description
TrenchMOS transistor Standard level FET
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general
applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
THERMAL RESISTANCES
April 1998
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
V
SYMBOL
R
R
D
D
DM
PIN
V
stg
DS
DGR
tot
C
tab
th j-mb
th j-a
1
2
3
GS
, T
j
gate
drain
source
drain
purpose
enhancement
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
transistor
switching
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
Human body model
(100 pF, 1.5 k )
CONDITIONS
-
in free air
mb
mb
mb
mb
GS
tab
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1 2 3
1
V
GS
= 10 V
SYMBOL
TYP.
MIN.
MIN.
- 55
60
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
19.7
175
55
61
75
MAX.
MAX.
MAX.
19.7
13.9
2.46
175
55
55
16
79
61
2
BUK7575-55
-
d
s
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
UNIT
kV
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

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BUK7575-55 Summary of contents

Page 1

... GS PIN CONFIGURATION tab CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS Human body model (100 pF, 1 CONDITIONS - in free air 1 Product specification BUK7575-55 MAX. UNIT 55 19.7 61 175 SYMBOL MIN. MAX. UNIT - 19 175 ˚ ...

Page 2

... Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad CONDITIONS 19.7 A; -dI /dt = 100 - Product specification BUK7575-55 MIN. TYP. MAX. UNIT 2.0 3.0 4 ...

Page 3

... GS 100 ID/A 10 120 140 160 180 f & 0.1 0.01 120 140 160 180 Product specification BUK7575-55 MIN. TYP. MAX ˚C mb RDS(ON) = VDS/ VDS/V Fig.3. Safe operating area ˚ f single pulse; parameter Zth/ (K/W) 0.5 0.2 0 ...

Page 4

... Fig.9. Normalised drain-source on-state resistance -100 GS(TO) 4 Product specification BUK7575- ID f(I ); conditions BUK959-60 Rds(on) normlised to 25degC -100 - 100 Tmb / degC / DS(ON) DS(ON)25 ˚C ...

Page 5

... Ciss Coss Crss 10 100 , Fig.15. Normalised avalanche energy rating. iss oss rss VDS = 44V VGS Product specification BUK7575-55 Tj/C = 175 0 0 0.5 1 VSDS/V Fig.14. Typical reverse diode current. = f(V ); conditions parameter T SDS GS WDSS ...

Page 6

... Philips Semiconductors TrenchMOS transistor Standard level FET RD VGS RG 0 Fig.17. Switching test circuit. April 1998 VDD + VDS - T.U.T. 6 Product specification BUK7575-55 Rev 1.100 ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1998 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK7575-55 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.100 15,8 max ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1998 8 Product specification BUK7575-55 Rev 1.100 ...

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