BUK9628-55 Philips Semiconductors, BUK9628-55 Datasheet - Page 5

• Manufacturer Part Number: BUK9628-55
• Description: TrenchMOS transistor Logic level FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
April 1998
TrenchMOS
Logic level FET
Fig.13. Typical turn-on gate-charge characteristics.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-05
VGS/V
V
2.5
1.5
.5
GS
Fig.12. Typical capacitances, C
3
2
1
0
0.01
I
C = f(V
D
6
5
4
3
2
1
0
0
= f(Q
0
= f(V
Fig.11. Sub-threshold drain current.
G
GS)
DS
); conditions: I
0.5
); conditions: V
5
; conditions: T
0.1
2%
transistor
10
1
typ
VDS = 14V
1
D
QG/nC
1.5
15
= 40 A; parameter V
j
GS
= 25 ˚C; V
VDS/V
Sub-Threshold Conduction
= 0 V; f = 1 MHz
98%
20
2
10
iss
, C
DS
VDS = 44V
oss
25
= V
2.5
, C
GS
rss
100
.
DS
Ciss
Coss
Crss
30
3
5
VGS
IF/A
0
I
Fig.15. Normalised avalanche energy rating.
100
F
80
60
40
20
120
110
100
0
= f(V
90
80
70
60
50
40
30
20
10
0
0
Fig.14. Typical reverse diode current.
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
SDS
DSS
DSS
40
); conditions: V
% = f(T
RGS
0.5 LI
60
0.5
mb
Tj/C =
80
); conditions: I
D
2
BV
Tmb / C
VSDS/V
100
GS
DSS
175
L
= 0 V; parameter T
VDS
120
BV
T.U.T.
Product specification
DSS
1
BUK9628-55
140
D
shunt
= 40 A
R 01
V
25
DD
160
-
+
Rev 1.100
-ID/100
180
VDD
1.5
j