BUK9675-55 Philips Semiconductors, BUK9675-55 Datasheet

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BUK9675-55

Manufacturer Part Number
BUK9675-55
Description
TrenchMOS transistor Logic level FET
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mounting. Using ’trench’ technology
the device features very low on-state
resistance and has integral zener
diodes giving ESD protection up to
2kV. It is intended for use in
automotive and general purpose
switching applications.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
THERMAL RESISTANCES
April 1998
TrenchMOS
Logic level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
V
SYMBOL
R
R
D
D
DM
PIN
V
stg
DS
DGR
tot
C
mb
th j-mb
th j-a
1
2
3
GS
, T
j
gate
drain
source
drain
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
transistor
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
1
2
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
Human body model
(100 pF, 1.5 k )
CONDITIONS
-
Minimum footprint, FR4
board
mb
mb
mb
mb
GS
3
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1
mb
V
GS
= 5 V
SYMBOL
TYP.
MIN.
MIN.
- 55
50
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
19.7
175
55
61
75
MAX.
MAX.
MAX.
19.7
13.9
2.46
175
55
55
10
79
61
2
BUK9675-55
-
d
s
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
UNIT
kV
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

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BUK9675-55 Summary of contents

Page 1

... CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS Human body model (100 pF, 1 CONDITIONS - Minimum footprint, FR4 board 1 Product specification BUK9675-55 MAX. 55 19.7 61 175 SYMBOL MIN. MAX. UNIT - 19 175 MIN ...

Page 2

... Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad CONDITIONS 19.7 A; -dI /dt = 100 - Product specification BUK9675-55 MIN. TYP. MAX. UNIT 1 0 ...

Page 3

... GS 100 ID/A 10 120 140 160 180 f & 0.1 0.01 120 140 160 180 Product specification BUK9675-55 MIN. TYP. MAX ˚C mb RDS(ON) = VDS/ VDS/V Fig.3. Safe operating area ˚ f single pulse; parameter Zth/ (K/W) 0.5 0.2 0 ...

Page 4

... Fig.9. Normalised drain-source on-state resistance 2.5 2 1.5 1 0.5 0 -100 GS(TO) 4 Product specification BUK9675-55 Transconductance, gfs ( Drain current f(I ); conditions BUK959-60 Rds(on) normlised to 25degC -100 - 100 Tmb / degC ...

Page 5

... Coss Crss 10 100 , Fig.15. Normalised avalanche energy rating. iss oss rss VDS = 44V VGS Product specification BUK9675-55 Tj/C = 175 0 0.5 1 VSDS/V Fig.14. Typical reverse diode current. ); conditions parameter T SDS GS WDSS 100 120 140 Tmb / C ...

Page 6

... Philips Semiconductors TrenchMOS transistor Logic level FET RD VGS RG 0 Fig.17. Switching test circuit. April 1998 VDD + VDS - T.U.T. 6 Product specification BUK9675-55 Rev 1.100 ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". April 1998 10.3 max 11 max 15.4 0.85 max (x2) Fig.18. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.19. SOT404 : soldering pattern for surface mounting . 7 Product specification BUK9675-55 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.100 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1998 8 Product specification BUK9675-55 Rev 1.100 ...

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