BS107A Philips Semiconductors, BS107A Datasheet - Page 4

• Manufacturer Part Number: BS107A
• Description: N-channel enhancement mode vertical D-MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
April 1995
Drain-source breakdown voltage
Drain-source leakage current
Gate-source leakage current
Gate threshold voltage
Drain-source ON-resistance
Transfer admittance
Input capacitance at f = 1 MHz
Output capacitance at f = 1 MHz
Feedback capacitance at f = 1 MHz
Switching times (see Figs 2 and 3)
j
= 25 C unless otherwise specified
N-channel enhancement mode vertical
D-MOS transistor
I
V
V
I
I
I
V
V
V
I
I
D
D
D
D
D
D
DS
GS
DS
DS
DS
= 10 A; V
= 1 mA; V
= 250 mA; V
= 250 mA; V
= 100 mA; V
= 250 mA; V
= 130 V; V
= 15 V; V
= 25 V; V
= 25 V; V
= 25 V; V
DS
GS
GS
GS
GS
DS
GS
DS
GS
GS
DD
= V
= 0
= 0
= 0
= 0
= 0
= 10 V
= 25 V
= 0
= 10 V
= 50 V; V
GS
GS
= 0 to 10 V
4
V
I
I
V
R
R
C
C
C
t
t
DSS
GSS
on
off
(BR)DSS
GS(th)
y
DSon
DSon
iss
oss
rss
fs
min.
max.
max.
min.
max.
typ.
max.
typ.
max.
min.
typ.
typ.
typ.
typ.
typ.
typ.
Product specification
BS107A
200 V
200
350
1.0
3.0
4.5
6.4
4.2
6.0
3.5 pF
30 nA
10 nA
45 pF
15 pF
15
5
V
V
mS
mS
ns
ns