MTD2N50E Motorola, MTD2N50E Datasheet

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MTD2N50E

Manufacturer Part Number
MTD2N50E
Description
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS
Power Field Effect Transistor
DPAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
Gate–Source Voltage
Drain Current — Continuous
Drain Current
Drain Current
Total Power Dissipation
Total Power Dissipation @ T A = 25 C, when mounted to minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
Thermal Resistance — Junction to Case
Thermal Resistance
Thermal Resistance
Maximum Temperature for Soldering Purposes, 1/8 from case for 10 seconds
This high voltage MOSFET uses an advanced termination
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
Replaces MTD2N50
Derate above 25 C
(V DD = 75 Vdc, V GS = 10 Vdc, I L = 2.0 Apk, L = 50 mH, R G = 25 )
— Continuous @ 100 C
— Single Pulse (t p
E-FET.
— Junction to Ambient
— Junction to Ambient, when mounted to minimum recommended pad size
— Non–Repetitive (t p
(T C = 25 C unless otherwise noted)
Data Sheet
10 s)
Rating
10 ms)
G
D
S
Symbol
T J , T stg
V DGR
V GSM
V DSS
R JC
R JA
R JA
V GS
E AS
I DM
P D
T L
I D
I D
MTD2N50E
CASE 369A–13, Style 2
R DS(on) = 3.6 OHM
TMOS POWER FET
Motorola Preferred Device
– 55 to 150
2.0 AMPERES
Value
500 VOLTS
0.32
1.75
3.13
71.4
500
500
100
100
260
2.0
1.5
6.0
Order this document
40
20
40
DPAK
by MTD2N50E/D
Watts
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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MTD2N50E Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 D G Rating 10 ms) Order this document by MTD2N50E/D MTD2N50E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS R DS(on) = 3.6 OHM CASE 369A–13, Style 2 DPAK ...

Page 2

... MTD2N50E ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 500 Vdc Vdc 500 Vdc Vdc 125 C) Gate–Body Leakage Current ( ...

Page 3

... Figure 4. On–Resistance versus Drain Current 1000 100 10 1 100 125 150 0 50 100 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MTD2N50E –55 C 100 C 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4 DRAIN CURRENT (AMPS) and Gate Voltage ...

Page 4

... MTD2N50E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... DM ), the energy rating is specified at rated continuous cur- rent ( accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at cur- rents below rated continuous I D can safely be assumed to equal the values indicated. MTD2N50E t d(off d(on GATE RESISTANCE (OHMS) 0 ...

Page 6

... MTD2N50E SINGLE PULSE 1.0 100 0.1 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E–05 1.0E–04 6 SAFE OPERATING AREA 100 ...

Page 7

... Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MTD2N50E Board Material = 0.0625 G–10/FR– Copper 5.0 Watts ...

Page 8

... MTD2N50E Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SC–59, SC– ...

Page 9

... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 17. Typical Solder Heating Profile MTD2N50E STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX 9 ...

Page 10

... D 0.027 0.035 0.69 0.88 E 0.033 0.040 0.84 1.01 F 0.037 0.047 0.94 1.19 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.175 0.215 4.45 5.46 S 0.020 0.050 0.51 1.27 U 0.020 ––– 0.51 ––– V 0.030 0.050 0.77 1.27 Z 0.138 ––– 3.51 ––– MTD2N50E/D ...

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