MTP3N100E Motorola, MTP3N100E Datasheet
MTP3N100E
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MTP3N100E Summary of contents
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... Preferred devices are Motorola recommended choices for future use and best overall value. REV 3 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 ms) Order this document by MTP3N100E/D MTP3N100E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1000 VOLTS R DS(on) = 4.0 OHM CASE 221A–06, Style 5 TO– ...
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... MTP3N100E ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS www.DataSheet4U.com Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 1000 Vdc Vdc 1000 Vdc Vdc 125 C) Gate– ...
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... Figure 4. On–Resistance versus Drain Current 100000 10000 1000 100 10 1 100 125 150 0 100 200 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MTP3N100E 100 –55 C 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6 DRAIN CURRENT (AMPS) ...
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... MTP3N100E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. www.DataSheet4U.com The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...
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... DM ), the energy rating is specified at rated continuous cur- rent ( accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at cur- rents below rated continuous I D can safely be assumed to equal the values indicated. MTP3N100E t d(off d(on) 10 ...
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... MTP3N100E 100 SINGLE PULSE www.DataSheet4U.com 1.0 0.1 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E–05 1.0E–04 6 SAFE OPERATING AREA 250 200 150 100 s ...
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... STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN R J CASE 221A–06 ISSUE Y MTP3N100E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX ...
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... EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 8 Motorola TMOS Power MOSFET Transistor Device Data *MTP3N100E/D* MTP3N100E/D ...