MTP75N03HDL Motorola, MTP75N03HDL Datasheet

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MTP75N03HDL

Manufacturer Part Number
MTP75N03HDL
Description
TMOS POWER FET
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advanced Information
HDTMOS E-FET
High Density Power FET
N–Channel Enhancement–Mode Silicon Gate
withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for low–voltage,
high–speed switching applications in power supplies, converters
and PWM motor controls, and inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
Gate–Source Voltage
Drain Current — Continuous
Total Power Dissipation
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
Thermal Resistance — Junction to Case
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
This advanced high–cell density HDTMOS E–FET is designed to
Motorola, Inc. 1995
Ultra Low R DS(on) , High–Cell Density, HDTMOS
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
Avalanche Energy Specified
Derate above 25 C
(V DD = 25 Vdc, V GS = 5.0 Vdc, I L = 75 Apk, L = 0.1 mH, R G = 25 )
— Continuous @ 100 C
— Single Pulse (t p
— Single Pulse (t p
— Junction to Ambient
(T C = 25 C unless otherwise noted)
10 s)
Rating
10 ms)
G
D
S
Symbol
T J , T stg
V DGR
V DSS
R JC
R JA
V GS
E AS
I DM
P D
T L
I D
I D
MTP75N03HDL
R DS(on) = 9.0 mOHM
CASE 221A–06, Style 5
TMOS POWER FET
Motorola Preferred Device
– 55 to 175
LOGIC LEVEL
Value
75 AMPERES
62.5
225
150
280
260
1.0
1.0
TO–220AB
25
25
75
59
15
20
Order this document
by MTP75N03HDL/D
25 VOLTS
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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MTP75N03HDL Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 G Rating 10 ms Order this document by MTP75N03HDL/D MTP75N03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES R DS(on) = 9.0 mOHM 25 VOLTS D CASE 221A– ...

Page 2

... MTP75N03HDL ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS Drain–Source Breakdown Voltage (C pk 2.0) ( Vdc 0.25 mA) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc 125 C) Gate–Body Leakage Current ( CHARACTERISTICS (1) Gate Threshold Voltage ( ...

Page 3

... 100 – 120 150 100 125 150 Temperature MTP75N03HDL 150 120 90 60 100 – 1.5 2 2 GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0.009 0.008 0.007 ...

Page 4

... MTP75N03HDL Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... 0.5 0.6 0 SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA MTP75N03HDL 10000 t r 1000 d(off) 100 t d(on GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Compared to Motorola standard cell density low voltage 0 ...

Page 6

... MTP75N03HDL The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a case temperature ( Peak ...

Page 7

... TIME (s) Figure 13. Thermal Response di/ Figure 14. Diode Reverse Recovery Waveform MTP75N03HDL P (pk ( CURVES APPLY FOR POWER PULSE TRAIN SHOWN t 1 READ TIME J(pk) – (pk (t) DUTY CYCLE 1.0E– ...

Page 8

... K 0.500 0.562 12.70 L 0.045 0.060 1.15 N 0.190 0.210 4.83 Q 0.100 0.120 2.54 R 0.080 0.110 2.04 S 0.045 0.055 1.15 T 0.235 0.255 5.97 U 0.000 0.050 0.00 V 0.045 ––– 1.15 Z ––– 0.080 ––– Motorola TMOS Power MOSFET Transistor Device Data MTP75N03HDL/D *MTP75N03HDL/D* MAX 15.75 10.28 4.82 0.88 3.73 2.66 3.93 0.64 14.27 1.52 5.33 3.04 2.79 1.39 6.47 1.27 ––– 2.04 ...

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